2014
DOI: 10.7567/jjap.53.04ee13
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An 8 channel, 20 V output CMOS switching driver with 3.3 V power supply using triple-well biasing techniques for integrated MEMS device control

Abstract: An 8 channel output switching driver has been implemented for integrated micro-electro-mechanical systems (MEMS) device control using the 0.18 µm CMOS process technology. The driver can output 20 V switching signals for 1 nF capacitive loads with a 3.3 V power supply. The switching time is less than 100 µs. To obtain a high output voltage that exceeds the transistors’ and capacitors’ breakdown voltages, a new charge pump and a discharge circuit, using optimal transistor-well-biasing techniques for triple-well-… Show more

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Cited by 5 publications
(2 citation statements)
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“…Although the increment in the theoretical output voltage is proportional to the number of the stages, the actual maximum voltage is limited by two factors: The breakdown voltage of parasitic diodes in the CMOS LSI circuits and the loss in the threshold voltage of MOS transistors. For instance, the breakdown voltage of the low-voltage logic circuit in the standard CMOS process is 50 V (10×V DD ) at most, which is the breakdown voltage of p-n junction between the deep n-well and p-diff layer [36]. Although charge pumps based on non-transistor components such as poly-silicon diodes have been proposed, their maximum voltages are still less than 50 V [37].…”
Section: Designmentioning
confidence: 99%
“…Although the increment in the theoretical output voltage is proportional to the number of the stages, the actual maximum voltage is limited by two factors: The breakdown voltage of parasitic diodes in the CMOS LSI circuits and the loss in the threshold voltage of MOS transistors. For instance, the breakdown voltage of the low-voltage logic circuit in the standard CMOS process is 50 V (10×V DD ) at most, which is the breakdown voltage of p-n junction between the deep n-well and p-diff layer [36]. Although charge pumps based on non-transistor components such as poly-silicon diodes have been proposed, their maximum voltages are still less than 50 V [37].…”
Section: Designmentioning
confidence: 99%
“…Recently, MEMS sensors have become a hot topic due to their "consumerization" trend and fast-growing market, and more and more new applications of MEMS sensors have begun to be found in consumer products such as mobile phones, CMOS pad, etc. [1][2][3][4][5][6] With the development of the Internet of Things, sensor networks and autonomous vehicles, the market for MEMS sensors will increase sharply, especially in the automotive electronics area. [7][8][9][10][11] Because of the diversity of the MEMS process, some kind of MEMS sensor product will integrate the CMOS circuit and MEMS module through the PCB or packaging level, such as a MEMS microphone, etc.…”
Section: Introductionmentioning
confidence: 99%