Articles you may be interested inAnalysis and design of ionimplanted bubble memory devices J. Appl. Phys. 61, 3491 (1987); 10.1063/1.338735Thinfilm detector performance on a one megabit magnetic bubble memory One megabit bubble memory operation over extended temperatures A novel probe tester for the characterization of 1 Mbit/cm2 bubble memory devices Design and functional characteristics of a 3μm, 254 K bit block replicate bubble memory device A low drive field I megabit bubble memory device has been developed with relaxed function designs and a planar process using a new type of Siloxane resin. The I megabit device uses a block replicate/swap organization based upon 1.9 p,m diameter bubbles. The basic cell size is 7 p,mX8 p,m while the minimum feature size has a value of 1 p,m. The chip size is 9.1 mm X 9.9 mm. Fabricated 1 megabit chips have been characterized over a drive field range of 4S to 6S Oe (peak field of 100 kHz triangular wave drive). and over a temperature range of 0 to 90"C. The results obtained in the characterization for the 1 megabit chips are good enough to guarantee the same drive field and sense requirements for packaged 1 megabit devices as those for 3 p, m bubble 2S6 kbit devices.