We have investigated the physical and electrical properties of anodic oxide films treated by a variety of aqueous electrolyte solutions. All anodic oxide diodes revealed consecutive current regimes varying with bias voltage as V, V2, and Vn (n≳2) in the steady-state current-voltage characteristics. Here, the transition voltage from the V2 to Vn current regime and the voltage exponent n varied depending on the oxide forming electrolyte and the bias direction of the diodes. These electrical properties were interpreted as a space-charge-limited current modified by a distributed gap state density in space and in energy. The oxide had a double-layer structure, a layer containing an anion characteristic of each electrolyte and an anion-free layer. The anion-containing layer had a varying gap state distribution. This was due to the anion characteristics, which reduce a deep-lying gap state density and modify a tail state density. We propose two practical anodizing techniques to control the depth profile of the anion. This allows us to form an oxide with a small leakage current equivalent to an anion-free control oxide. We also show that the dielectric loss for the anion-free oxide was reduced through the formation in an organic electrolyte and was increased in an inorganic electrolyte.

Time-resolved X-ray diffraction of muscle has demanded ever-increasing flux into small sample volumes with low beam divergence. Results are reported of static and time-resolved small-angle X-ray diffraction studies on muscle fibers using a hard X-ray undulator installed in the Tristan main ring at KEK, Tsukuba, Japan, as an innovative source of synchrotron radiation more intense and better collimated than that available with the Photon Factory bending-magnet beamline. Static studies used the low divergence of the source to obtain detailed high-quality diffraction patterns of stable muscle states. The diffraction patterns from live skeletal muscles showed the numerous (over 100) meridional reflections. The well collimated beam from the undulator made it possible to clearly resolve, with an angular resolution of ca 700 nm, the closely spaced diffraction peaks arising from the two halves of the thick filaments centred on the M lines in a sarcomere, in addition, the diffraction peaks from the thin filaments on opposite sides of the Z bands could be resolved with an angular resolution of ca 1000 nm. The detailed structure of the meridional pattern defines the nature of the molecular packing in the thick and thin filaments. Time-resolved experiments using a focusing mirror aimed to prove cross-bridge states in striated muscle fibers by collecting X-ray diffraction data at a 0.185 ms time resolution from sinusoidally oscillating chemically skinned rabbit muscle fibers during active contraction and in rigor. When sinusoidal length changes at 500 Hz with a peak-to-peak amplitude of 0.6% of the muscle length were applied to a small fiber bundle, the tension showed a simple elastic response during the length oscillation. In the active muscle the intensity of the 14.5 nm myosin-based meridional reflection changed out of phase with the tension change during the oscillating length change. In contrast, in the rigor muscle it occurred in phase with the tension change. The high time-resolved experiments provide an insight into the coupling between conformational changes and force generation of the actomyosin cross-bridges. These studies provide a preview of the expected gains for muscle studies from the more widespread use of undulator radiation at third-generation synchrotron sources.

A comprehensive study is made of the anodization behavior and electrical and physicochemical properties of anodic oxides for use as thin film transistor (TFT) gate dielectrics. The matrix metals examined are pure AI, A1-1.1 atom percent (a/o) Ta, A1-0.5 a/o Ti, and AI-I.0 weight percent St, and electrolytes in aqueous solution are ammonium tartrate, triammonium citrate, diammonium hydrogenphosphate, and ammonium tetraborate-boric acid. Breakdown voltage in anodization, which corresponds to maximum formable thickness, was highest for the oxide of A1-Ta for all solutions. A dielectric strength of over 7.0 • 108 V/cm was achieved for oxides of the combinations A1-Ta and A1-Ti/inorganic solution. Leakage current in the anodic oxide annealed at 300~ was lowest for the combination Al/inorganic solution. The oxide of A1-Si for all solutions was no better than that of A1 for any of the properties investigated. The most promising combination for gate dielectrics was A1-Ta and A1-Ti/inorganic solution, giving a field effect mobility of 1.0 to 1.5 cm2/Vs and an on-off current ratio of more than 108 for TFTs fabricated with a double-layer gate dielectric structure of an anodic oxide layer/a plasma chemically vapor deposited SiN~. layer.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 137.99.31.134 Downloaded on 2015-06-30 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 137.99.31.134 Downloaded on 2015-06-30 to IP

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