An Accurate All CMOS Bandgap Reference Voltage with Integrated Temperature Sensor for IoT Applications

Maddikatla, Sunil Kumar; Jandhyala, Srivatsava

doi:10.1109/isvlsi.2016.115

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…Moreover, the power consumption of the PTAT generators is still high for the targeted applications [9]. [7] and [8] use architectures which generate process independent PTAT voltages. However, the architectures still consume nA currents and to scale down their current consumption to pA, impractical resistances of the order of GΩs must be used.…”

Section: Introductionmentioning

confidence: 99%

A 419pW Process-Invariant Temperature Sensor for Ultra-Low Power Microsystems

Pullela

Ali

Jain

et al. 2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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The paper presents a sub-nW BJT based temperature sensor for ultra-low power microsystems. The sensor is based on amplifying the difference between baseemitter voltages of BJTs using gate-leakage transistors. Implemented in UMC 65nm technology, the sensor occupies an area of 0.005mm 2 . It achieves a maximum non-linearity error of 0.12 o C(3σ) over the temperature range of −55 o C to 80 o C. Without any trimming, a worst case inaccuracy of +0.36 o C/ − 1.61 o C is observed w.r.t process variations, depicting the process-invariant nature of the temperature sensor. It also achieves a low supply sensitivity of 0.56 o C/V over a wide supply range of 0.7V-3V. The power consumption of the sensor is 419pW at 27 o C and 0.7V supply.

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Section: Introductionmentioning

confidence: 99%