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The paper presents a sub-nW BJT based temperature sensor for ultra-low power microsystems. The sensor is based on amplifying the difference between baseemitter voltages of BJTs using gate-leakage transistors. Implemented in UMC 65nm technology, the sensor occupies an area of 0.005mm 2 . It achieves a maximum non-linearity error of 0.12 o C(3σ) over the temperature range of −55 o C to 80 o C. Without any trimming, a worst case inaccuracy of +0.36 o C/ − 1.61 o C is observed w.r.t process variations, depicting the process-invariant nature of the temperature sensor. It also achieves a low supply sensitivity of 0.56 o C/V over a wide supply range of 0.7V-3V. The power consumption of the sensor is 419pW at 27 o C and 0.7V supply.

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