In the present work the High Aspect Ratio Process (HARP) using a new O 3 /TEOS based sub atmospheric chemical vapor deposition process was implemented as STI gapfill in sub-65nm CMOS. We prove good gapfill performance up to aspect ratios larger 10:1. Since this fill process doesn't attack the STI liners as compared to HDP, a variety of different STI liners can be implemented.
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