An accurate and efficient model for boron implants through thin oxide layers into single-crystal silicon

Ion beams in silicon processing and characterization

“…This analytic function approach is much more computationally efficient than physically based models, and has been demonstrated to accurately describe the impurity profile over four to five orders of magnitude variation in the concentration. [14][15][16][17][18] In addition, this approach has been demonstrated to model the wide range of different shaped profiles resulting from channeled implants, off-axis ͑mini-mum channeling͒ implants, different doses, and low mass ͑B͒ and high mass ͑As͒ implant species. [14][15][16][17][18] The development of accurate models of this type, however, requires extensive experimental data, especially in order to correctly understand and predict the detailed channeling dependence of the profile on the various parameters.…”

“…The Dual-Pearson fitting procedure 14 has been highly successful in the semi-empirical model development for B, BF 2 , As, and P implants [15][16][17][18] because of its ability to account so well for the dependence of both the randomly scattered and the channeled parts of the implanted profile on all of the key implant parameters. These models have explicit dependence on energy, dose, tilt angle, and rotation angle, and examples of their excellent predictive capabilities are illustrated in Fig.…”

“…The relative information content of a page, book, and encyclopedia is shown for comparison. ) 10 18 10 18 10 19 10 19 10 20 10 20 Wafer diameter ͑mm͒ 200 200 300 300 300 Metal impurity (at. cm Ϫ2 ) 5ϫ10 10 2.5ϫ10 10 1.0ϫ10 10 5ϫ10 9 2.5ϫ10 9 Ͻ2.5ϫ10 9…”

One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide

“…The reduced aluminum channeling in the case of increasing order of implantation energy was attributed to the amorphization caused by one implantation affecting the subsequent implantation (Ottaviani et al, 1999). In the case of boron implantation into (100) Si, the influence of surface oxide layer is crucial (Morris et al, 1995). When the tilt angle is 0°, the depth of the as-implanted profile decreases with increasing oxide thickness because a well-collimated ion beam is scattered by the amorphous oxide layer.…”

“…The (Mochizuki and Onose, 2007) to implantations without the SiO 2 layer. The dual-Pearson distribution is a weighted sum of two Pearson IV functions (Pearson, 1895) used to model the randomly scattered portion and the channeled portion of the profile (Morris et al, 1995). The depth profile of aluminum, N (x), is represented by (Tasch et al, 1989)…”