An amorphous silicon triode rectifier switching device for active-matrix liquid-crystal display

In this paper, NH 3 plasma directly applied to the surface of poly-Si channel is studied for the development of high-performance low-temperature polycrystalline-silicon thinfilm transistors (LTPS-TFTs) with HfO 2 high-κ gate dielectric. The reduction of threshold voltage from 1.52 to 0.62 V, the decrease of subthreshold swing from 227 to 151 mV/decade, and the enhancement of field effect mobility μ FE from 31 to 65 cm 2 /V s are observed after NH 3 plasma surface treatment. It can be attributed to the NH 3 plasma surface treatment enabling defect passivation and plasma-induced interfacial layer (PIL) growth. To decouple the impacts of defect passivation and PIL growth, the device without PIL is also fabricated. This paper demonstrates the important impacts of NH 3 plasma surface treatment on the improvement of electrical characteristics of LTPS-TFTs.Index Terms-Interfacial layer, low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs), NH 3 , plasma passivation.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

An amorphous silicon triode rectifier switching device for active-matrix liquid-crystal display

Cited by 3 publications

References 5 publications

Properties of nano-crystalline silicon thin film fabricated by electron beam exposure

Properties of nano-crystalline silicon thin film fabricated by electron beam exposure

Crystallization of amorphous silicon films via electron beam exposure

Threshold Voltage Reduction and Mobility Improvement of LTPS-TFTs With NH<sub>3</sub> Plasma Treatment

Contact Info

Product

Resources

About