An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation

Suemitsu, Tetsuya; Enoki, T.; Sano, Nobuyuki; Tomizawa, M.; Ishii, Y.

doi:10.1109/16.735714

Cited by 109 publications

(46 citation statements)

References 23 publications

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“…Because of the existence of a high electric field in the gate-to-drain region, significant hot electron phenomena occur in the narrow bandgap InGaAs channel. Furthermore, electrons can obtain high energy to generate electron-hole pairs through enhanced impact ionizations, resulting in the easier injection of holes into the gate terminal [46]. However, the peak gate current density for MOS-MHEMT is significantly improved as compared to that of reference MHEMT.…”

Section: Semiconductor Technologies 144mentioning

confidence: 91%

Selective Oxidation on High-Indium-Content InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistors

Wang¹,

Lee²

2010

Semiconductor Technologies

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Section: Semiconductor Technologies 144mentioning

confidence: 91%

Selective Oxidation on High-Indium-Content InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistors

Wang¹,

Lee²

2010

Semiconductor Technologies

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“…This is because surface pinning should only be significant in the uncapped recess region; two dimensional effects thus imply that the size of will decrease as the length of the recess on the source side is reduced. Such an effect has been observed in simulations [4]. However, (1) does capture the key dependencies of the channel potential-it should depend logarithmically on the number of holes inside the channel in the extrinsic source.…”

Section: Physical Model For the Kinkmentioning

confidence: 95%

“…Additionally, simulations show that the kink disappears if the impact ionization mechanism is turned off in the simulator [3], [4], [15]. Finally, we have reported sidegate measurements establishing a direct relationship between impact ionization and the kink [16], [17], as well as transient measurements showing that the time constants associated with the kink are strongly correlated with the impact ionization rate [18].…”

mentioning

confidence: 96%

“…If indeed charging of surface states or interface states is responsible for the kink, it is clear that changes in growth [7] or surface treatments [26] might suppress the kink by relaxing Fermi level pinning [3], [4]. Similarly, the two-dimensional effects discussed above help us to understand why the kink increases with the width of the recess-pinning will only occur in the region where the InGaAs cap is removed; the longer this region is, the closer the device comes to the simplified model presented above.…”

Section: Physical Model For the Kinkmentioning

confidence: 99%

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A new physical model for the kink effect on InAlAs/InGaAs HEMTs

Somerville

Alamo

Hoke³

Proceedings of International Electron Devices Meeting

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Abstract-We present a new model for the the kink effect in InAlAs/InGaAs HEMT's. The model suggests that the kink is due to a threshold voltage shift which arises from a hole pile-up in the extrinsic source and an ensuing charging of the surface and/or the buffer-substrate interface. The model captures the many of the observed behaviors of the kink, including the kink's dependence on bias, time, temperature, illumination, and device structure. Using the model, we have developed a simple equivalent circuit, which reproduced well the kink's dc characteristics, its time evolution in the nanosecond range, and its dependence on illumination.

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“…Due to the high electric field existing in the gate-todrain region, hot electron phenomena occur in the narrow band-gap InGaAs channel. Electrons can obtain higher energy to generate electron-hole pairs through the enhanced impact ionization, resulting in easy injection of the holes into the gate terminal [23]. However, in InGaP-related devices, it is more difficult for the holes generated by the impact ionization to overcome the valence band discontinuity and to reach the gate [4], so the bell shaped behavior of the impact ionization does not appear in Fig.…”

mentioning

confidence: 99%

Liquid Phase Oxidation on InGaP and Its Applications

Wang¹,

Lee²

2010

Advances in Solid State Circuit Technologies

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IntroductionHigh-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have attracted many attentions in high speed and power applications due to the superior transport properties. As compared to AlGaAs pseudomorphic HEMTs (PHEMTs), InGaPrelated devices have advantages, such as higher band gaps, higher valence-band discontinuity [1], negligible deep-complex (DX) centers [2], excellent etching selectivity between InGaP and GaAs, good thermal stabilities [3][4][5], higher Schottky barrier heights [3], and so on. Particularly, the use of an undoped InGaP insulator takes the advantages of its low DX centers and low reactivity with oxygen [6-10], which may still suffer from the high gate leakage issue. In order to inhibit the gate leakage issue, increase the power handling capabilities, and improve the breakdown voltages, a metal-oxide-semiconductor (MOS) structure has been widely investigated. However, it is still lacks a reliable native oxide film growing on InGaP, and very few papers have reported on InGaP/InGaAs MOS-PHEMTs. In addition, the MOS-PHEMT not only has the advantages of the MOS structure (e.g., lower leakage current and higher breakdown voltage) but also has the high-density, high-mobility 2DEG channel. Over the past years, a study on the liquid phase oxidation (LPO) of InGaP near room temperature has been done [11][12][13][14]. The application of surface passivation to improve the InGaP/GaAs HBTs' performance has also been first demonstrated [13]. The InGaP/GaAs HBTs with surface passivation by LPO exhibit significant improvement in current gain at low collector current regimes due to the reduction of surface recombination current, as compared to those without surface passivation. Moreover, a larger breakdown voltage and a lower base recombination current are also obtained. In this chapter, the oxide film composition and some issues are addressed. Then a thin InGaP native oxide film prepared by the LPO as the gate dielectric for InGaP/InGaAs MOS-PHEMTs application are discussed, and the comparisons between devices with and without LPO passivation on the InGaP/GaAs HBTs are also reviewed.

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An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation

Cited by 109 publications

References 23 publications

Selective Oxidation on High-Indium-Content InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistors

Selective Oxidation on High-Indium-Content InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistors

A new physical model for the kink effect on InAlAs/InGaAs HEMTs

Liquid Phase Oxidation on InGaP and Its Applications

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