An analytic method for parameter extraction of InP HBTs small-signal model

Abstract

Purpose High-speed Indium Phosphide (InP) HBTs have been widely used to design high-speed analog, digital and mixed-signal integrated circuits. The purpose of this study is to propose a new parameter extraction procedure for determining an improved T-topology small-signal equivalent circuit of InP heterojunction bipolar transistors (HBTs). Design/methodology/approach The alternating current crowding effect is considered through adding the intrinsic base capacitance in the small-signal equivalent circuit. All of the circuit parameters are extracted directly without using any approximation. Findings The extraction technique is more easily understood and clearer than other extraction methods, as the equations are derived from the S-parameters by peeling peripheral elements from small-signal models to get reduced ones and extracting each equivalent-circuit parameter using each equation. Originality/value To validate the presented parameter extraction technology, an n-p-n emitter-up InP HBT was analyzed adopting the method. Excellent agreement between measured and modeled S-parameters is obtained up to 40 GHz.

Analytical Neuro-space Mapping Technology for Heterojunction Bipolar Transistors Modeling

“…Many researchers made contributions to HBT modeling methods [6][7][8][9][10]. Some existing traditional modeling techniques such as equivalent circuit modeling match HBT data by manually adjusting the parameters, which are heavily based on trial-and-error process [11].…”