1980
DOI: 10.1063/1.327954
|View full text |Cite|
|
Sign up to set email alerts
|

An analytical formula and important parameters for low-energy ion sputtering

Abstract: Sputtering yields for different ions and materials at low ion energies have a similar energy dependence. Due to this similarity, yield data can be characterized by a normalized energy function and two parameters for each ion target combination. One of these parameters is the threshold energy. An energy scaling can be based on this parameter. The other parameter is a multiplication factor. Both parameters depend mainly on the ion and target mass M1 and M2 and on the surface binding energy EB. An analytic expres… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

1
83
2
2

Year Published

1983
1983
2019
2019

Publication Types

Select...
9
1

Relationship

0
10

Authors

Journals

citations
Cited by 250 publications
(88 citation statements)
references
References 13 publications
1
83
2
2
Order By: Relevance
“…This value is significantly larger than values that have been determined in laboratory measurements of sputtering from energetic ion bombardment of solid target materials [Behrisch, 1981;Bodhansky et al, 1980;Lebedinets and Shushkova, 1970;Ratcliff et al, 1997;Tielens et al, 1994]. However, with meteoroids entering the atmosphere the collision fluxes are much larger than in the laboratory experiments, and for most of the time the meteoroids are molten.…”
Section: Discussioncontrasting
confidence: 39%
“…This value is significantly larger than values that have been determined in laboratory measurements of sputtering from energetic ion bombardment of solid target materials [Behrisch, 1981;Bodhansky et al, 1980;Lebedinets and Shushkova, 1970;Ratcliff et al, 1997;Tielens et al, 1994]. However, with meteoroids entering the atmosphere the collision fluxes are much larger than in the laboratory experiments, and for most of the time the meteoroids are molten.…”
Section: Discussioncontrasting
confidence: 39%
“…At that velocity, He + , the most important ion for sputtering, carries an energy of 1.3 eV. However, a minimum of 2.2 eV is required to remove H 2 O (Bohdansky et al 1980), so sputtering is unimportant for our purposes.…”
Section: Accretion Shockmentioning
confidence: 99%
“…2(b), only large PMMA agglomerates and some of the ripples are left on the SiO 2 surface, which suggests that graphene was effectively sputtered after 5 min of plasma treatment. 30 eV is slightly lower than the physical sputtering threshold of graphene with hydrogen, 25,26 which indicates chemical sputtering. 27 It is indeed well-established in literature that hydrogen ions sputter carbon materials chemically either through CH 3 creation with one bond remaining to graphene lattice that reduce sputtering threshold 28 or through supersaturation of hydrogen at the immediate surface.…”
mentioning
confidence: 99%