An Analytical Model of the Forward I– V Characteristics of 4H-SiC p-i-n Diodes Valid for a Wide Range of Temperature and Current

On the Crossing-Point of 4H-SiC Power Diodes Characteristics

“…Observing in this case that the contact resistance measured in [4] varies as R 1923K C = 1.7 (T /300) −4.2 m cm 2 and that R E P I , R SU B do not differ from the previous ones, it is immediate to verify that the previous inequality is not verified in this case. This is also confirmed from the analysis in [10], where similar anodes implanted on 5μm−thick epilayers showed a parasitic series resistance of 5m cm 2 with a temperature coefficient of −20μ cm 2 K −1 , and the curves did not exhibit interlacing behavior. It is worth noting that, by modeling R E P I as in [16]: (2).…”

“…3 with the Hall carrier density measured in [6] on diodes implanted with similar N Al values and annealed at the same temperature of 2223K /5mi n. Moreover, to best simulate the experimental curves in Fig. 2, in addition to the previous V Al expression, the apparent bandgap narrowing, V G , in the heavily doped regions has been modeled as in [10], the carrier mobility as in [11], and, finally, the electron and hole lifetimes have been assumed, for simplicity, wherever coincident and temperature-doping dependent as in [11], τ = τ 0 (T /300) α 1 + N A(D) /5 × 10 16 −1 , with α and τ 0 taken as fitting parameters. Operating in this way, best fit gave α = 2.15 and τ 0 equal to 10ns and 1ns for n−type and p−type regions, respectively, whereas, to describe the lower voltage portion of the J D -V D curves in Fig.…”

“…is the anode saturation current [10] and R T OT is the specific total series resistance, given from the sum of the contribution of the anode contact, R C (T ), the substrate, R SU B (T ), and injectiondependent resistance of the epilayer, R E P I (V D , T ). In the J S expression, n ie,A (T ) = n 300 i (T /300) 1…”

Analysis of Ambipolar Intrinsic Resistance of PIN Diode for Different Semiconductors Suitable for Power Devices

“…The known semiconductor material hitherto involves Si, Ge and GaAs but silicon carbide (SiC) [12] claims the highest current operation. Not only the high forward current operation but also high dopant activation energy and strong impact of temperature coefficient of the device forces the involvement of SiC in the modelling of power device [13,14].…”

Nonlinear Characteristics of P-I-N Diode Circuits Analyzed by a Physically Based Simulation Method

“…Their nonlinear characteristics are essential for circuit performances, and thus the accurate modelling of those nonlinear behaviours in circuits is fundamental to the circuit design and application. A number of simulation methods have been proposed, e.g., the equivalent-model based simulation method [3][4][5][6][7]; the analyticalmodel based simulation method [8], etc.. However, the aforementioned approaches suffer from limitations that may preclude their application in some cases.…”