An analytical surface potential modeling of fully-depleted symmetrical double-gate (DG) strained-Si MOSFETs including the effect of interface charges

Sarangi, Santunu; Santra, Abirmoya; Bhushan, Shiv; Gopi, K.; Dubey, Sarvesh; Tiwari, Pramod Kumar

doi:10.1109/sces.2013.6547495

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An analytical surface potential modeling of fully-depleted symmetrical double-gate (DG) strained-Si MOSFETs including the effect of interface charges

Cited by 2 publications

References 6 publications

Analysis of Device Characteristics of Dual material Double gate Strained N-Channel MOSFET

Analysis of Device Characteristics of Dual material Double gate Strained N-Channel MOSFET

An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates

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