An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates

Bhushan, Shiv; Sarangi, Santunu; Krishna, S.; Santra, Abirmoya; Dubey, Sarvesh; Tiwari, Pramod Kumar

doi:10.5573/jsts.2013.13.4.367

Cited by 6 publications

(4 citation statements)

References 38 publications

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“…The (x; y/ and (x; y 0 / coordinate systems that have been adopted in the present work are similar to those in Ref. [5]. The coefficients C i1 and C i 2 are functions of x, which is found by solving Eqs.…”

Section: Modeling Of Parameters and 2d Channelpotentialmentioning

confidence: 99%

“…( 7)- (10), using the boundary conditions, as mentioned in Ref. [5], the value of surface potential was found out as…”

Section: Modeling Of Parameters and 2d Channelpotentialmentioning

confidence: 99%

“…In continuation to the work reported in Ref. [5], the present work deals with the analytical modeling of the subthreshold current and subthreshold swing of short-channel-Si DMG MOSFETs. The subthreshold current formulation is based on the charge partition method OE6 .…”

Section: Introductionmentioning

confidence: 99%

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Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates

Tiwari¹,

Saramekala²,

Dubey³

et al. 2014

J. Semicond.

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The present work gives some insight into the subthreshold behaviour of short-channel double-material-gate strained-silicon on silicon—germanium MOSFETs in terms of subthreshold swing and off-current. The formulation of subthreshold current and, thereupon, the subthreshold swing have been done by exploiting the expression of potential distribution in the channel region of the device. The dependence of the subthreshold characteristics on the device parameters, such as Ge mole fraction, gate length ratio, work function of control gate metal and gate length, has been tested in detail. The analytical models have been validated by the numerical simulation results that were obtained from the device simulation software ATLAS™ by Silvaco Inc.

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Section: Modeling Of Parameters and 2d Channelpotentialmentioning

confidence: 99%

“…( 7)- (10), using the boundary conditions, as mentioned in Ref. [5], the value of surface potential was found out as…”

Section: Modeling Of Parameters and 2d Channelpotentialmentioning

confidence: 99%

See 1 more Smart Citation

Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates

Tiwari¹,

Saramekala²,

Dubey³

et al. 2014

J. Semicond.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Silicon is most commonly used semiconductor for the technology [2]. Low dimensional structures can be defined as structures and components that will improve physical, chemical, and biological properties that result in new phenomena and processes due to their nanoscale size [3].…”

Section: Introductionmentioning

confidence: 99%

Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

et al. 2017

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Abstract. In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

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The effect of interface trapped charges in DMG-S-SOI MOSFET: a perspective study

Mohapatra¹,

Pradhan²,

Sahu³

et al. 2014

Adv. Nat. Sci: Nanosci. Nanotechnol.

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In this paper, the existing two-dimensional (2D) threshold voltage model for a dual material gate fully depleted strained silicon on insulator (DMG-FD-S-SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is modified by considering the interface trapped charge effects. The interface trapped charge is a common phenomenon, and this charge cannot be neglected in nanoscale devices. For finding out the surface potential, parabolic approximation has been utilized and the virtual cathode potential method is used to formulate the threshold voltage. The developed threshold voltage model incorporates both positive as well as negative interface charges. Finally, validity of the presented model is verified with 2D device simulator Sentaurus™.

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An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates

Abstract: Abstract-In this paper, an analytical threshold voltage model is developed for a short-channel

Cited by 6 publications

References 38 publications

Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates

Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates

Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

The effect of interface trapped charges in DMG-S-SOI MOSFET: a perspective study

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