An approach to ZnTe:O intermediate-band photovoltaic materials

Tang, Na; Qimin, Hu; Ren, Aobo; Li, Wei; Liu, Cai; Zhang, Jingquan; Wu, Lili; Li, Bing; Hu, Shihao

doi:10.1016/j.solener.2017.08.078

Cited by 15 publications

(4 citation statements)

References 20 publications

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“…Intermediate bands in semiconductors can be obtained in several ways, for instance quantum dots in the semiconductor, 6 or using highly mismatched alloys. 7 Implanting semiconductor substrates with very high doses of transition metals (V, Ti, Cr, …), obtaining a supersaturated semiconductor, is also a well-known method in order to form the IB, 8 and is the way the silicon substrates were processed in this work.…”

Section: Introductionmentioning

confidence: 99%

Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

García

Castán

Dueñas

et al. 2018

Journal of Elec Materi

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Intermediate band in semiconductors have attracted much attention for their use in silicon-based solar cells and infrared detectors. In this work, n-Si substrates were implanted with very high doses (10 13 and 10 14 cm -2 ) of vanadium, which gives rise to a supersaturated layer inside the semiconductor. However, the Mott limit was not overtaken. The energy levels created in the supersaturated silicon were studied in detail by means of thermal admittance spectroscopy. We have found a single deep center at an energy of E C -250 meV or E C -200 meV depending on the dose. This value agrees with one of the levels found for vanadium in silicon. The capture cross section values of the deep levels were also calculated, and we found a relationship between the capture cross section and the energy position of the deep levels which follows the Meyer-Neldel rule. This process usually appears in processes involving multiple excitations.The Meyer-Neldel energy values agrees with the ones previously obtained for silicon supersaturated with titanium and for silicon contaminated with iron.

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Section: Introductionmentioning

confidence: 99%

Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

García

Castán

Dueñas

et al. 2018

Journal of Elec Materi

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“…2) The concept of IBSCs has been demonstrated in several approaches including quantum dots 3,4) and highly mismatched alloys. [5][6][7][8][9][10][11][12][13][14] Highly mismatched ZnTe 1−x O x (ZnTeO) alloy is a potential candidate for an absorber material in IBSCs because a narrow, O-derived intermediate band (E − ) is formed well below the conduction band (E + ) edge of the ZnTe. 9,10) Several research works on IBSCs using ZnTeO have been reported so far.…”

Section: Introductionmentioning

confidence: 99%

“…9,10) Several research works on IBSCs using ZnTeO have been reported so far. [8][9][10][11][12][13][14] To increase the efficiency of solar cells, not only the multiband layer but also the other layers in the solar cell structure need to be improved, and especially the conductivity control of the p-type ZnTe epitaxial layer is particularly important. So far, several elements such as nitrogen (N) and phosphorus (P) have been reported as acceptor dopants for p-type ZnTe.…”

Section: Introductionmentioning

confidence: 99%

Growth of phosphorus-doped ZnTe thin films by molecular beam epitaxy using InP as the dopant source

Mustofa

Mishima

Saito

et al. 2023

Jpn. J. Appl. Phys.

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P-doped ZnTe thin films were grown by molecular beam epitaxy on ZnTe (100) substrates using InP as a phosphorus supply under various different InP flux. Secondary ion mass spectroscopy (SIMS) analyses showed that P concentration in ZnTe thin films increases with increasing the InP flux although In atoms were also incorporated in the films. To suppress In incorporation, the outlet of the InP cell was modified by mounting a dome-shaped cap and a disk-shaped plate with small holes. As a result, P concentration decreases almost one order of magnitude as compared to the films grown without the cap but the significant reduction of In incorporation was confirmed by the SIMS and photoluminescence spectrum. A P-related acceptor bound exciton (Ia) peak was observed in the P-doped ZnTe thin film grown with the cap and the intensity of Ia emission increases after the annealing, indicating the activation of P acceptor.

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“…In II-VI based HMAs, ZnTeO and ZnSeO are of the interest. In the studies of ZnTeO [9][10][11][12][13][14][15][16] and ZnSeO [17,18], small portion of Te (Se) is replaced with O in dilute oxides, otherwise small fraction of O is replaced with Te (Se) [18][19][20][21] in dilute tellurides (selenide) forms.…”

Section: Introductionmentioning

confidence: 99%

Effects of oxygen variation on the improved structural stability, electronic and optical properties of ZnTeO compounds

Chang

Yoon

Lim

et al. 2020

J. Phys.: Condens. Matter

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Crystalline ZnTeO thin films are promising materials for next generation photovoltaics. However, their structural stability and optical nonlinearity potential in bulk form have not been reported. Here, structural, electronic and optical properties of ZnTeO composites have been thoroughly studied using genetic algorithm and density functional theory (DFT). Energetically, mechanically and dynamically stable O-rich phases, namely Zn 2 Te 2 O 6 and ZnTeO 4 , were obtained. Ground-state properties such as lattice constants and simulated XRD were analyzed and compared to the experimental literature wherever possible. With a G 0 W 0 corrected band gap, these semiconducting phases display several desirable features, namely, Jahn-Teller distorted cations, hardness and shear anisotropy-induced optical nonlinearity that increase monotonically as O concentration elevates. Such trends appear to be consistent with that seen in the experimental study of ZnTeO thin film. It is observed that Zn-d, Te-p and O-p states have immense influence towards the electronic properties of these structures. Both phases exhibit steep elevation of absorption throughout the ultraviolet (UV) range, hitting peak value of ~5.0 × 10 5 cm −1 . Of particular interest, the non-centrosymmetric ZnTeO 4 has second harmonic generation coefficients (9.84 pm V −1 and 2.33 pm V −1 at static limit) greater than borates crystal and large birefringence that exceeds 0.08 in deep UV region, thus highlighting its potential pedigree as new optical materials in UV range.

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An approach to ZnTe:O intermediate-band photovoltaic materials

Cited by 15 publications

References 20 publications

Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

Growth of phosphorus-doped ZnTe thin films by molecular beam epitaxy using InP as the dopant source

Effects of oxygen variation on the improved structural stability, electronic and optical properties of ZnTeO compounds

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