An Automated Measuring System for Current Deep-Level Transient Spectroscopy

Ermachikhin, A. V.; Litvinov, V. G.

doi:10.1134/s0020441218020021

Cited by 6 publications

(4 citation statements)

References 12 publications

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“…When measuring the I-DLTS spectra, the traps were filled with a voltage pulse with an amplitude of 0 V, and the DL were emptied at a reverse bias voltage of 2 V. In such a regime, the DL traps of the main charge carriersholes are predominantly filled. The measurement mode is selected on the basis of the restriction on the maximum possible value of the reverse leakage current through the sample for the used I-DLTS spectrometer [9].…”

Section: Results Of Experimental Samples Study By the Methods Of Curr...mentioning

confidence: 99%

“…To study deep centerstraps of charge carriers with deep energy levels (DL), the method of current deep-level transient spectroscopy (I-DLTS) was used. We used a I-DLTS spectrometer specially adapted for studying samples of a relatively large area (electrical barrier capacitance) and high leakage currents [9], that is typical of the semiconductor structure under study.…”

Section: Samples and Study Methodsmentioning

confidence: 99%

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Current Transfer in a Semiconductor Structure with a Porous Silicon Film formed by Metal-Stimulated Etching

et al. 2022

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It is shown that during a porous Si film formation by metal-stimulated etching a barrier layer is formed on a monocrystal p-Si substrate. The rectifying properties of the semiconductor structure can be explained by the fixation of the Fermi level in the near-surface layer of porous Si due to a high concentration of electrically active defects (deep centers or traps). It causes to energy bands bending and the appearance of a potential barrier. The study of Raman scattering showed the absence of size effects and a change in the band gap in the porous Si film. Activation energies of deep centers by the temperature dependence of the current-voltage characteristics and deep level transient spectroscopy study were determined. Keywords: porous silicon, deep level, Raman scattering, current-voltage characteristics, deep level transient spectroscopy.

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Section: Results Of Experimental Samples Study By the Methods Of Curr...mentioning

confidence: 99%

Section: Samples and Study Methodsmentioning

confidence: 99%

Current Transfer in a Semiconductor Structure with a Porous Silicon Film formed by Metal-Stimulated Etching

et al. 2022

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“…The I-V characteristics were measured using a Keithley 6517B electrometer. To investigate the presence of deep-energy levels at the boundary of the a-Si:H/c-Si interface, current deep-level transient spectroscopy (I-DLTS) was used [15].…”

Section: Physics Of Semiconductor Devicesmentioning

confidence: 99%

External Quantum Efficiency of Bifacial HIT Solar Cells

et al. 2020

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It is shown that the use of both sides of solar cells created with the heterojunction technology makes possible an increase in the solar-cell efficiency. The difference in illumination of the front and back sides is associated with transformation of the blue part of the spectrum, which is shown by the example of the spectral dispersion of the quantum efficiency. The average difference between the quantum efficiency for both sides is ~11%. The short-circuit current density with the power of the solar spectrum at sea level from 400 to 1100 nm is 36.3 mA/cm 2 for the front side and 32.7 mA/cm 2 for the back side. The decrease amounts to 9.7%.

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“…Для исследования дефектов с ГУ применялся метод токовой релаксационной спектроскопии глубоких уровней (CDLTS) [3]. Заполнение и опустошение ГУ проводилось импульсным напряжением.…”

Section: поступило в редакцию 16 ноября 2018 г в окончательной редакции 16 ноября 2018 г принято к публикации 21 ноября 2018 гunclassified

Дефекты С Глубокими Уровнями В Фотоэлектрическом Преобразователе С Антиотражающей Пленкой Пористого Кремния, Сформированной Окрашивающим Химическим Травлением

Трегулов¹,

Литвинов²,

Ермачихин³

2019

Письма В Журнал Технической Физики

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Defects in the semiconductor structure of a photovoltaic converter (PVC) with a p – n junction and antireflection film of porous silicon manufactured using chemical stain etching were studied by the current deep-level transient spectroscopy technique. The influence of the regime of porous silicon film formation on the transformation of deep-level defects and the main PVC characteristics is explained.

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An Automated Measuring System for Current Deep-Level Transient Spectroscopy

Cited by 6 publications

References 12 publications

Current Transfer in a Semiconductor Structure with a Porous Silicon Film formed by Metal-Stimulated Etching

Current Transfer in a Semiconductor Structure with a Porous Silicon Film formed by Metal-Stimulated Etching

External Quantum Efficiency of Bifacial HIT Solar Cells

Дефекты С Глубокими Уровнями В Фотоэлектрическом Преобразователе С Антиотражающей Пленкой Пористого Кремния, Сформированной Окрашивающим Химическим Травлением

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