61st ARFTG Conference Digest, Spring 2003.
DOI: 10.1109/arftgs.2003.1216880
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An automatic program suitable for on-wafer characterization and statistic analysis of microwave devices

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Cited by 4 publications
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“…In this study, we further take the noise parameters into account in the de-embedding procedure and also validate the applicability of the proposed method with measurements on silicon MOSFETs. We find that this scalable de-embedding method is indeed suitable for on-wafer -parameter and noise measurements, especially the on-wafer automatic characterization [7], of multitype and multisize devices. To substantiate the proposed method, MOSFETs fabricated using a standard 0.25-m five-level CMOS process were characterized from 1 to 18 GHz.…”
Section: Introductionmentioning
confidence: 88%
“…In this study, we further take the noise parameters into account in the de-embedding procedure and also validate the applicability of the proposed method with measurements on silicon MOSFETs. We find that this scalable de-embedding method is indeed suitable for on-wafer -parameter and noise measurements, especially the on-wafer automatic characterization [7], of multitype and multisize devices. To substantiate the proposed method, MOSFETs fabricated using a standard 0.25-m five-level CMOS process were characterized from 1 to 18 GHz.…”
Section: Introductionmentioning
confidence: 88%