An effective method to screen SOI wafers for mass production

Yue, Jin; Liu, S.T.; Fechner, P.; Gardner, G.; Witcraft, W.; Finn, C. L.

doi:10.1109/soi.1994.514272

Cited by 5 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…'2 The high quality of this film is very suitable for use in metal-insulatorsemiconductor field-effect transistors (MIS-FETs). 4 In two previous works,5 '6 we reported that thermal nitridation of Si02 by exposure to NH3 ambients at elevated temperatures has a strongly enhanced effect on phosphorus and boron diffusions in the Si bulk. Similar results have also been observed and reported by Fahey et at.7 and Mizuo et at.° In their works it was also found that for phosphorus and boron, the diffusion in NH3 is restarted if the Si surface is exposed and unchanged if the surface has a thick Si3N4 layer.…”

Section: Introductionmentioning

confidence: 78%

“…'2 The high quality of this film is very suitable for use in metal-insulatorsemiconductor field-effect transistors (MIS-FETs). 4 In two previous works,5 ' Mizuo et at.° In their works it was also found that for phosphorus and boron, the diffusion in NH3 is restarted if the Si surface is exposed and unchanged if the surface has a thick Si3N4 layer. Fahey and co-workers9 attribute these phenomena to the injection of silicon self-interstitials during nitridation of Si03 (i.e., oxynitridation) and the depletion of seif-interstitials during direct nitridation of the Si substrate.…”

Section: Introductionmentioning

confidence: 94%

“…4 The failures which determine the yield are related to leakage through the BOX; in this manner the density of light scattering centers is considered to be a measure of the density of conducting defects in the BOX.…”

Section: Introductionmentioning

confidence: 99%

“…Another important observation was that light scattering centers on the surface of the top Si layer are correlated with the yield of device fabrication. 4 The failures which determine the yield are related to leakage through the BOX; in this manner the density of light scattering centers is considered to be a measure of the density of conducting defects in the BOX.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Conducting and Charge‐Trapping Defects in Buried Oxide Layers of SIMOX Structures

Afanasʼev

Brown

Hughes

et al. 1996

J. Electrochem. Soc.

View full text Add to dashboard Cite

The conducting defects and charge-trapping defects in the buried oxide (BOX) of SIMOX structures depend on the processing conditions. Samples implanted with the oxygen ion beam in a channeling direction of the Si wafer contain more defects of both types than those prepared in an off-channel mode; thus, a correlation between excess silicon in the oxide forming Si clusters (amphoteric photosensitive defects) and the density of conducting defects may exist. We suggest that interstitial Si atoms generated during the implantation/anneal process form filaments in structural channels in the BOX. However, the density of conducting defects may be influenced by other factors, such as contamination and/or the extent of the localization (lateral inhomogeneity) of the trapping defects. The defects in the BOX are distributed in a laterally inhomogeneous manner. This may result in varying density of conducting defects for the same integrated density of amphoteric defects. The observation of defects in the top Si layer and their correlation with conducting defects in the BOX indicate the possible involvement of some contaminant in the formation of conducting channels in the BOX.

show abstract

Section: Introductionmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations