An electrically alterable nonvolatile memory cell using a floating-gate structure

Guterman, D.C.; Rimawi, I.H.; Chiu, Te-Long; Halvorson, R.D.; McElroy, D.

doi:10.1109/t-ed.1979.19462

Cited by 24 publications

References 24 publications

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Relaxation of Tunnel Injection Limited Current in Case of Low Capture Probability

Kornyushkin

Bryzgalova

Frantsuzov

1985

phys. stat. sol. (a)

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Relaxation of the tunnel injection limited current caused by electron capture in oxide is considered for two model distribution of the traps in oxide: traps located in the plane parallel to the injecting electrode and traps uniformly distributed in oxide. It is shown that current relaxation depends on the oxide electric field. Current relaxation is practically absent for a high field region E ≪ Ec and the current relaxation law is j = j0/(1 + t/τ) for a low field region E ≪ Ec, both for traps placed in the plane and traps uniformly distributed in the oxide. The characteristic electric field, Ec, depends on the trap density, Ec = \documentclass{article}\pagestyle{empty}\begin{document}$\sqrt {qBN/\varepsilon \varepsilon _0 }$\end{document}. In a moderate electric field region, E ≈ Ec, the current relaxation law is j = j0(t/τ)−n, n decreasing as the oxide field increases n = 1/(1 + (E/Ec)2), for uniformly distributed traps in the oxide and the current relaxation curves can be approximated by a power law, j ∽ t−n, on the rapid part of the relaxation curve for traps located in the plane.

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Relaxation of Tunnel Injection Limited Current in Case of Low Capture Probability

Kornyushkin

Bryzgalova

Frantsuzov

1985

phys. stat. sol. (a)

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Relaxation of Current Flowing through Oxide Thermally Grown on Polycrystalline Silicon

Kornyushkin

Bryzgalova

Frantsuzov

1985

phys. stat. sol. (a)

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on the occasion of his80th birthdayRelaxation of the current flowing through an oxide thermally grown on polycrystalline silicon is studied in the spread time region to lo3 s) and for the structures of the different area size (8 x 1 0 -8 t o cm2). It is shown that the current relaxation curves cannot be approximated by the simple power law jt -n , with n < 1, as generally accepted, but having a complicated form with parts of constant current level and parts of current relaxation with the hyperbolic law jl / t A strong dependence of the form of the relaxation curves on the area size of the structure is observed. A model explaining the results by summing up the local currents is proposed. The area from which the current flows in the initial part of the relaxation curve is estimated.

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Silicon Devices and Process Integration

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An electrically alterable nonvolatile memory cell using a floating-gate structure

Cited by 24 publications

References 24 publications

Relaxation of Tunnel Injection Limited Current in Case of Low Capture Probability

Relaxation of Tunnel Injection Limited Current in Case of Low Capture Probability

Relaxation of Current Flowing through Oxide Thermally Grown on Polycrystalline Silicon

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