The current-time characteristics of a polysilicon-polysilicon oxide-polysilicon structure were determined as a function of several MOS IC process parameters. We found a strong dependence of the current with the polysilicon oxidation temperature (900~176 in the case of an oxygen ambient. The data were empirically analyzed by an equation of the form J = At -n where "A" and "n" are constants; the current and "n" factor dependencies with measurement temperature (23~176 and MOS bias (reference) electric field (1-3 X 106 V/cm) will be discussed. Interpretation of the data within the framework of surface asperities at the polysilicon-polysilicon oxide interface and a FowlerNordheim injection model will be discussed.

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This paper reviews the three dominant E2 technologies today, namely the two floating gate approaches of thin tunnel oxide and oxide on textured poly and the dual dielectric approach of MNOS. It evaluates each approach with respect to cell design, operation, manufacturability, compatibility with established process technologies and reliability. It follows with a comparison of the technologies in the areas of development entry cost, scaling and reliability. After a review of the market Place. this DaDer concludes with a projection of to support full F P R O M as we1 ASIC (Applicatil Electrically the requirements of E2 technoloaies 1 on a1 f unction, commodity memoTies as low cost microcontrollers and Specific Integrated Circuits). t

A technique for imaging internal structures in MIS devices has been developed. The device is scanned by an electron beam in a scanning electron microscope and the induced current is used to modulate a CRT display. Direct−current bias on the sample and incident beam energy determine which structure (metal−insulator interface, semiconductor−insulator interface, or insulator bulk) is observed. Secondary electron images, C−V measurements, and bias temperature stress data are used to facilitate image interpretation. A variety of structures have been observed at both interfaces on MOS capacitors with lateral resolution on the order of 1000 Å. Experimental results support a model with field variations across the oxide film providing the dominant contribution to image contrast.