An electro-photo-sensitive synaptic transistor for edge neuromorphic visual systems

Duan, Nian; Li, Yang; Chiang, Hsiao‐Cheng; Chen, Jia; Pan, Wen-Qian; Zhou, Ya-Xiong; Chien, Yu‐Chieh; He, Yuhui; Xue, Kan‐Hao; Liu, Gang; Chang, Ting‐Chang; Miao, Xiangshui

doi:10.1039/c9nr04195h

Cited by 81 publications

(60 citation statements)

References 49 publications

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“…This behavior is believed to be related to the Ca 2+ concentration in the presynaptic neuron. 49 The first spike will enhance the overall Ca 2+ level, and thus increase the resulting synaptic current stimulated by the second spike. Due to the exponential decay of the residual Ca 2+ , the PPF effect becomes weaker when the time interval increases.…”

Section: Resultsmentioning

confidence: 99%

“…Besides, the magnitude of the enhancement is determined by the time interval (

∆ t

) between two spikes, where a larger

∆ t

will lead to a smaller amplitude enhancement. This behavior is believed to be related to the Ca 2+ concentration in the presynaptic neuron 49 . The first spike will enhance the overall Ca 2+ level, and thus increase the resulting synaptic current stimulated by the second spike.…”

Section: Resultsmentioning

confidence: 99%

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Intrinsic polarization coupling in 2D α‐In₂Se₃toward artificial synapse with multimode operations

Gao

Zheng

et al. 2021

SmartMat

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Emulation of advanced synaptic functions of the human brain with electronic devices contributes an important step toward constructing high-efficiency neuromorphic systems. Ferroelectric materials are promising candidates as synaptic weight elements in neural network hardware due to their controllable polarization states. However, the increased depolarization field at the nanoscale and the complex fabrication process of the traditional ferroelectric materials hamper the development of high-density, low-power, and highly sensitive synaptic devices. Here, we report the implementation of twodimensional (2D) ferroelectric α-In 2 Se 3 as an active channel material to emulate typical synaptic functions. The α-In 2 Se 3-based synaptic device features multimode operations, enabled by the coupled ferroelectric polarization under various voltage pulses applied at both drain and gate terminals. Moreover, the energy consumption can be reduced to~1 pJ by using high-κ dielectric (Al 2 O 3). The successful control of ferroelectric polarizations in α-In 2 Se 3 and its application in artificial synapses are expected to inspire the implementation of 2D ferroelectric materials for future neuromorphic systems. K E Y W O R D S 2D ferroelectrics, artificial synapse, high-κ dielectric, multimode operations, α-In 2 Se 3 1 | INTRODUCTION Over the past few decades, computers based on the conventional von Neumann architecture have achieved great success in performing arithmetic operations, leading to the revolution of information technology. 1 However, the physically separated logic and memory blocks, known as von Neumann bottleneck, inevitably limit the computational efficiency and speed as well as the scalability of the architecture. 2,3 Inspired by human brain, neuromorphic

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Section: Resultsmentioning

confidence: 99%

“…Besides, the magnitude of the enhancement is determined by the time interval (

∆ t

) between two spikes, where a larger

∆ t

Section: Resultsmentioning

confidence: 99%

Intrinsic polarization coupling in 2D α‐In₂Se₃toward artificial synapse with multimode operations

Gao

Zheng

et al. 2021

SmartMat

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“…In biological neural systems, paired pulse facilitation (PPF) is regarded as a vital form of short-term plasticity for the decoding of temporal information. [5,20,49] The PPF behaviors of the GDY/ MoS 2 -based EGT have been demonstrated by applying two successive current pulses with various intervals (Δt). As shown in Figure 2f, the peak value of the PSC triggered by the second spike (A2) is significantly enhanced in comparison with that triggered by the first spike (A1).…”

Section: Emulation Of Synaptic Plasticitymentioning

confidence: 99%

“…[1][2][3] Human brain-inspired neuromorphic computing, which can parallelly process unstructured information in an energyefficient manner, has attracted great attention in recent years. [3][4][5][6][7][8][9][10][11][12] Various artificial synapses, such as two-terminal memristors [13][14][15][16][17] and multiterminal neuromorphic transistors, [18][19][20][21][22][23][24] have been proposed to construct hardware artificial neural networks (ANNs) for neuromorphic computing. Especially, electrolytegated transistors (EGTs) using electrolyte to modulate the conductance state of the channels have been demonstrated as a promising candidate for neuromorphic applications due to their prominent analog switching performance.…”

Section: Introductionmentioning

confidence: 99%

Non‐Volatile Electrolyte‐Gated Transistors Based on Graphdiyne/MoS₂ with Robust Stability for Low‐Power Neuromorphic Computing and Logic‐In‐Memory

Yao

Chen

et al. 2021

Adv Funct Materials

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Artificial synapses are the key building blocks for low-power neuromorphic computing that can go beyond the constraints of von Neumann architecture. In comparison with two-terminal memristors and three-terminal transistors with filament-formation and charge-trapping mechanisms, emerging electrolyte-gated transistors (EGTs) have been demonstrated as a promising candidate for neuromorphic applications due to their prominent analog switching performance. Here, a novel graphdiyne (GDY)/MoS 2 -based EGT is proposed, where an ion-storage layer (GDY) is adopted to EGTs for the first time. Benefitting from this Li-ion-storage layer, the GDY/MoS 2 -based EGT features a robust stability (variation < 1% for over 2000 cycles), an ultralow energy consumption (50 aJ µm −2 ), and long retention characteristics (>10 4 s). In addition, a quasi-linear conductance update with low noise (1.3%), an ultrahigh G max /G min ratio (10 3 ), and an ultralow readout conductance (<10 nS) have been demonstrated by this device, enabling the implementation of the neuromorphic computing with near-ideal accuracies. Moreover, the nonvolatile characteristics of the GDY/MoS 2 -based EGT enable it to demonstrate logic-in-memory functions, which can execute logic processing and store logic results in a single device. These results highlight the potential of the GDY/MoS 2 -based EGT for next-generation low-power electronics beyond von Neumann architecture.

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“…The filament‐based synaptic devices are insensitive to optical stimuli (part 4.1–4.2). However, the unique properties of 2D semiconductor materials, such as light‐driven doping, charge trapping/detrapping by light illumination, or light‐induced phase transition, provide another dimension for synaptic operation: sensitivity to optical stimuli . The lack of sensitivity to light stimuli in part 4.5 originates from the phase transition by ion intercalations rather than light illumination …”

Section: Comparison Of Different Synaptic Devicesmentioning

confidence: 99%

Recent Progress in Synaptic Devices Based on 2D Materials

Sun

Wang

Yang

2020

Advanced Intelligent Systems

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Diverse synaptic plasticity with a wide range of timescales in biological synapses plays an important role in memory, learning, and various signal processing with exceptionally low power consumption. Emulating biological synaptic functions by electric devices for neuromorphic computation has been considered as a way to overcome the traditional von Neumann architecture in which separated memory and information processing units require high power consumption for their functions. Synaptic devices are expected to conduct complex signal processing such as image classification, decision‐making, and pattern recognition in artificial neural networks. Among various materials and device architectures for synaptic devices, 2D materials and their van der Waals (vdW) heterostructures have been attracting tremendous attention from researchers based on their capacity to mimic unique synaptic plasticity for neuromorphic computing. Herein, the basic operations of biological synapses and physical properties of 2D materials are discussed, and then 2D materials and their vdW heterostructures for advanced synaptic operations with novel working mechanisms are reviewed. In particular, there is a focus on how to design synaptic devices with the vdW structures in terms of critical 2D materials and their limitations, providing insight into the emerging synaptic device systems and artificial neural networks with 2D materials.

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An electro-photo-sensitive synaptic transistor for edge neuromorphic visual systems

Abstract: An electro-photo-sensitive synapse based on a highly reliable InGaZnO thin-film transistor is demonstrated to mimic synaptic functions and pattern-recognition functions.

Cited by 81 publications

References 49 publications

Intrinsic polarization coupling in 2D α‐In₂Se₃toward artificial synapse with multimode operations

Intrinsic polarization coupling in 2D α‐In₂Se₃toward artificial synapse with multimode operations

Non‐Volatile Electrolyte‐Gated Transistors Based on Graphdiyne/MoS₂ with Robust Stability for Low‐Power Neuromorphic Computing and Logic‐In‐Memory

Recent Progress in Synaptic Devices Based on 2D Materials

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An electro-photo-sensitive synaptic transistor for edge neuromorphic visual systems

Abstract: An electro-photo-sensitive synapse based on a highly reliable InGaZnO thin-film transistor is demonstrated to mimic synaptic functions and pattern-recognition functions.

Cited by 81 publications

References 49 publications

Intrinsic polarization coupling in 2D α‐In2Se3toward artificial synapse with multimode operations

Intrinsic polarization coupling in 2D α‐In2Se3toward artificial synapse with multimode operations

Non‐Volatile Electrolyte‐Gated Transistors Based on Graphdiyne/MoS2 with Robust Stability for Low‐Power Neuromorphic Computing and Logic‐In‐Memory

Recent Progress in Synaptic Devices Based on 2D Materials

Contact Info

Product

Resources

About

Intrinsic polarization coupling in 2D α‐In₂Se₃toward artificial synapse with multimode operations

Intrinsic polarization coupling in 2D α‐In₂Se₃toward artificial synapse with multimode operations

Non‐Volatile Electrolyte‐Gated Transistors Based on Graphdiyne/MoS₂ with Robust Stability for Low‐Power Neuromorphic Computing and Logic‐In‐Memory