An Electrode Structure for Ferroelectric Thin Films and Its Application to the Nanotransfer Method

Abstract

One method of miniaturizing electric boards is to reduce the capacitor area on the board. We fabricated a thin film capacitor on a Si wafer, released the capacitor from the wafer, and transferred the released capacitor onto a board. BaTiO 3 (BTO) was chosen as the dielectric material, and a capacitor was fabricated using metal-organic decomposition (MOD) onto a Si wafer with Ti and Pt as the bottom electrode. Measured electric properties included the dielectric constant, at about 640, as the I-V property, and hysteresis. When a BaTiO 3 film was deposited onto the substrate, which had only a Pt electrode (no Ti used for bonding layer) to release from the substrate after deposition, the electrode broke because of internal stress. The stress was measured quantitatively and a new electrode structure was designed to overcome the problem. ECR etching proved adequate for making the electrode structure.

Study on Homogeneous Wafer Level Dielectric Film Preparation Using Chemical Solution Deposition Method

“…The statistical method will be also applicable for the other properties of formed thin films and the results are useful for MEMS device fabrication [24][25][26] and the integration technology of electrical devices including piezoelectric films [27][28][29][30][31] using wafer level fabrication technology.…”

Fabrication and Characterization of Ferroelectric PZT and BaTiO3 Thin Films on Releasable Electrode Structures

“…In a previous study, a double-layered electrode structure, consisting of two kinds of areas with and without the Ti layer, was prepared. [2] In this study, the Ti layer of the electrode structure is used to protect the release during Figure 11 shows the XRD patterns of the fabricated PZT thin films.…”