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One method of miniaturizing electric boards is to reduce the capacitor area on the board. We fabricated a thin film capacitor on a Si wafer, released the capacitor from the wafer, and transferred the released capacitor onto a board. BaTiO 3 (BTO) was chosen as the dielectric material, and a capacitor was fabricated using metal-organic decomposition (MOD) onto a Si wafer with Ti and Pt as the bottom electrode. Measured electric properties included the dielectric constant, at about 640, as the I-V property, and hysteresis. When a BaTiO 3 film was deposited onto the substrate, which had only a Pt electrode (no Ti used for bonding layer) to release from the substrate after deposition, the electrode broke because of internal stress. The stress was measured quantitatively and a new electrode structure was designed to overcome the problem. ECR etching proved adequate for making the electrode structure.

It is useful to be able to further miniaturize printed wiring boards (PWBs) to achieve more compact and multi-functional mobile electronics. Since about 40-50% of the surface of a PWB is covered with passive elements such as capacitors, it is clear that miniaturization would improve performance. On the other hand, PWBs have a low temperature resistance, and thus the boards cannot use capacitors that require higher processing temperatures. The nano-transfer method, which consists of release and transfer steps, solves this problem. After the capacitor is fabricated on a high-temperature-resistant substrate, it is released from the substrate and mounted on the PWB. The purpose of this study is to clarify the release process in order to establish a fabrication technology for embedded substrates.

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