High EQE exciplexes were also reported by mixing an n-type acceptor with an intramolecular TADF material. The TADF material is a kind of bipolar material with a donor-acceptor structure and it could make the intermolecular type exciplex with the n-type or p-type material. [24][25][26] For instance, 6-(9,9-dimethylacridin-10(9H)-yl)-3-methyl-1H-isochromen-1-one (MAC):PO-T2T exciplexes were derived from a n-type acceptor and an TADF emitter. [20] The exciplexes could also be developed by integrating two TADF emitters which have the large highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) offset. Bis [4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS): 9,9′,9″-(5-(4,6-diphenyl-1,3, 5-triazin-2-yl)benzene-1,2,3-triyl)tris (9H-carbazole) (TCzTrz) is an example of the exciplex derived from two TADF emitters. [27] A high EQE of 15.3% was attained in the exciplex. However, the EQE of the exciplexes was rather limited because of low photoluminescence quantum yield (PLQY) of the exciplex. Unlike the common emitting layer system comprised of host and dopant, the exciplex emitting layer is like a nondoped emitting layer. Therefore, the exciton quenching of the exciplexes may occur in the emitting layer, decreasing the EQE of the exciplex organic light-emitting diodes (LEDs) (OLEDs). Another reason is the nature of the exciplex emission which is known as the intermolecular charge transfer emission. Compared with the intramolecular TADF emission, the intermolecular exciplex emission is relatively inefficient by loss mechanisms between two materials. Therefore, a new way of improving the EQE of the exciplexes is strongly required.Herein, we describe a host-dopant type ternary exciplex system with a high EQE of 17.5%. A p-type donor and a n-type acceptor were introduced to form a high energy exciplex and an additional donor-acceptor type TADF emitter was mixed as another p-type donor to generate a low energy exciplex with the n-type acceptor. The high energy exciplex functioned as a host and the low energy exciplex behaved as a dopant in the ternary exciplex. Final exciplex emission was observed from the low energy exciplex. It was demonstrated that the dispersion of the low energy exciplex in the high energy exciplex and the energy transfer from the high energy exciplex to the low energy exciplex increased the EQE of the exciplex devices. The EQE of the exciplex device achieved in this work is one of the best EQEs reported in the exciplex OLEDs.Ternary exciplexes with an external quantum efficiency of 17.5% are developed by mixing a p-type donor material, an n-type acceptor material, and a donor-acceptor type material together. In the ternary mixture, the n-type donor generates exciplexes with the p-type donor and the donor-acceptor type material at the same time. Two different exciplexes with dissimilar emission wavelengths are formed and the emission of the high-energy exciplex is transferred to the low-energy exciplex by energy transfer. The high-energy exciplex and low-energy ex...