An Explicit Thermal Resistance Model Regarding Self-Heating Effect of AlGaN/GaN High Electron Mobility Transistor

Abstract

This paper introduced an accurate empirical model for the thermal resistance of a single-finger AlGaN-GaN high electron mobility transistor (HEMT) on three different substrates including Sapphire, SiC and Si. The model reckons the constant thermal conductivity of GaN and substrate, thickness of host substrate layers, gate length (Lg) and width (Wg). The model plausibility is verified by comparing it with DC channel temperature measurement method and charge controlled based device modeling which agrees very favorable observation of the model data. Having nimble expression for the channel temperature is of inordinate importance in the field of designers of power device and monolithic microwave integrated circuits. Proposed model gives a variety of inquiries that would be impossible or impractical to do using time-consuming numerical simulations.

Impact of Charge-Trapping Effects on Reliability Instability in AlxGa1−xN/GaN High-Electron-Mobility Transistors with Various Al Compositions

“…Materials 2023, 16, 4469 2 of 9 Reliability concerns of Al x Ga 1−x N/GaN HEMTs have been caused by trap effects related to a drain, gate lag, and current collapse with various types of degradation [11][12][13]. The AlGaN layer, which is usually the surface layer and has an interface with the GaN channel, is a source of reliability instability, including trapping in the gate-to-drain access region, deep-level, and Al x Ga 1−x N/GaN interface [14].…”

“…The defect sites in the AlGaN barrier layer and the interface Al x Ga 1−x N/GaN are the predominant cause of the transient-charging effects (Figure 1) [18,19] interface quality of the AlxGa1−xN/GaN is essential for improving carrier transport in the channel [10]. Reliability concerns of AlxGa1−xN/GaN HEMTs have been caused by trap effects related to a drain, gate lag, and current collapse with various types of degradation [11][12][13]. The AlGaN layer, which is usually the surface layer and has an interface with the GaN channel, is a source of reliability instability, including trapping in the gate-to-drain access region, deep-level, and AlxGa1−xN/GaN interface [14].…”

Modeling Temperature of Contact Generated in Coatings of Pure Alumina Ceramic onto Low Carbon Steel Type 1.0060 Obtained by the Thermal Spraying Process

“…Thermal spraying of ceramic coatings is an important method of protecting various metallic parts that are exposed to harsh environments. Hard ceramic coatings are excellent candidates for anti-wear and anti-corrosion applications [4][5][6][7][8]. Sprayed Alumina (Al2O3) coatings have the potential for improving the mechanical properties depending on the enhancements of physical properties resulting from the microstructure characteristics [9][10][11].…”