This paper introduced an accurate empirical model for the thermal resistance of a single-finger AlGaN-GaN high electron mobility transistor (HEMT) on three different substrates including Sapphire, SiC and Si. The model reckons the constant thermal conductivity of GaN and substrate, thickness of host substrate layers, gate length (Lg) and width (Wg). The model plausibility is verified by comparing it with DC channel temperature measurement method and charge controlled based device modeling which agrees very favorable observation of the model data. Having nimble expression for the channel temperature is of inordinate importance in the field of designers of power device and monolithic microwave integrated circuits. Proposed model gives a variety of inquiries that would be impossible or impractical to do using time-consuming numerical simulations.

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The purpose of this study was to investigate the effect of a behavioral skills training involving written teaching, modeling, role-play, and feedback for performance accuracy and maintenance of discrete-trial teaching(DTT) procedures to three parents of children with developmental disabilities. Three parents of children with developmental disabilities were trained to implement discrete-trial teaching through behavioral skills training. A multiple baseline across participants design was used, consisting baseline, written instruction, modeling, role-play, feedback, and maintenance phases. The results demonstrated that behavioral skills training has improved the accuracy of DTT and maintained. Two participated parents reached mastery levels of correct implementation at the feedback phase. The results indicated that behavioral skills training could be an effective training method for parents of children with developmental disabilities.