An exposure model for electron-sensitive resists

Greeneich, James S.; Duzer, T. Van

doi:10.1109/t-ed.1974.17914

Cited by 82 publications

(19 citation statements)

References 24 publications

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“…Analysis of the electron beam influence on the resist stack is essential part of designing the EBL process, especially for structures with complicated geometry, [4,5]. Therefore Monte Carlo simulation, assisted by the CASINO software, was the first step of the research on the T-gate structures fabrication for HEMT transistors.…”

Section: Theoretical Partmentioning

confidence: 99%

Electron Beam Lithography Double Step Exposure Technique for Fabrication of Mushroom-Like Profile in Bilayer Resist System

Indykiewicz¹,

Paszkiewicz²,

Szymański³

et al. 2015

Journal of Electrical Engineering

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The Hi/Lo bilayer resist system exposure in e-beam lithography (EBL) process, intended for mushroom-like profile fabrication, was studied. Different exposure parameters and theirs influence on the resist layers were simulated in CASINO software and the obtained results were compared with the experimental data. The AFM technique was used for the estimation of the e-beam penetration depth in the resist stack. Performed numerical and experimental results allow us to establish the useful ranges of the exposure parameters.

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Section: Theoretical Partmentioning

confidence: 99%

Electron Beam Lithography Double Step Exposure Technique for Fabrication of Mushroom-Like Profile in Bilayer Resist System

Indykiewicz¹,

Paszkiewicz²,

Szymański³

et al. 2015

Journal of Electrical Engineering

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“…[9][10][11][12][13] The 2D resist profiles at the bottom plane of the resist, Fig. 1͑a͒ and 1͑b͒, respectively.…”

Section: Rd Simulation and Pe Effectsmentioning

confidence: 99%

Resist debris formation and proximity exposure effect in electron beam lithography

Deshmukh

Rangra

Wadhawan

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The evaluation was carried out under the condition that the representative figures exist in all small regions S r . The number of representative figures is 1ϫ10 6 .…”

Section: B Stealth (Step 2)mentioning

confidence: 99%

“…Accordingly, an EB system with high acceleration voltage 1-3 will be required, even for reticle fabrication. 4,5 Reticle writing by high acceleration EB, however, is subject to many problems, for example, the proximity effect [6][7][8][9][10][11][12][13] and resist heating. 14,15 In this article, proximity effect correction by the dose correction method is discussed for reticle fabrication.…”

Section: Introductionmentioning

confidence: 99%

Reticle fabrication by high acceleration voltage electron beam: Representative figure method for proximity effect correction [VI]

Abe

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Proximity effect correction for reticle making by the dose correction method is discussed. A new algorithm for calculating the optimum dose is proposed, which is based on the dose formula method and the representative figure method. Its main feature is that dose evaluation points are fixed at individual small regions whose size is sufficiently small compared with the backscattering range. The calculation speed of the computer is evaluated which is sufficient to suppress the correction time to less than the writing time. The required calculation speed is 500 MIPS×4 CPU at most for a minimum feature size greater than 0.2 μm on the reticle. This result suggests that the real-time proximity effect correction is possible for making reticles. Furthermore, when the algorithm is applied to x-ray mask fabrication and direct writing process, the calculation time can be suppressed to less than the writing time.

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An exposure model for electron-sensitive resists

Cited by 82 publications

References 24 publications

Electron Beam Lithography Double Step Exposure Technique for Fabrication of Mushroom-Like Profile in Bilayer Resist System

Electron Beam Lithography Double Step Exposure Technique for Fabrication of Mushroom-Like Profile in Bilayer Resist System

Resist debris formation and proximity exposure effect in electron beam lithography

Reticle fabrication by high acceleration voltage electron beam: Representative figure method for proximity effect correction [VI]

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