An IGBT behavioural model based on curve fitting methods

Baraia, I.; Galarza, J.; Barrena, Jon Andoni; Canales, José María Flores

doi:10.1109/pesc.2008.4592232

Cited by 7 publications

(3 citation statements)

References 8 publications

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“…Above the saturation voltage up to breakdown voltage, IGBT operates in the saturation mode. The transfer characteristic and the gate voltage determine the collector current at any collector voltage [12]. Figure 2 to model the IGBT behaviour in its different states (cut-off, linear and saturation).…”

Section: Model Descriptionmentioning

confidence: 99%

A SPICE IGBT Model with easy parameters extraction

Hadini

Galadi

Echchelh

2019

Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 20

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An accurate IGBT model is presented in this paper. It is based on the IGBT physical structure. The model uses an equivalent circuit which combines a MOSFET, controlled by a voltage-controlled voltage source, in series with a diode. the required parameters can be extracted with a simple procedure from the datasheet dc characteristics given by the manufacturers. The results of the comparison between the simulation and the datasheet information shows an average error less than 9% for the output characteristics and less than 7% for the transfer characteristic. Moreover, the model is simple and can be implemented in any SPICE-based circuit simulator. A description of the model and the parameter extraction procedure will be provided along.

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Section: Model Descriptionmentioning

confidence: 99%

A SPICE IGBT Model with easy parameters extraction

Hadini

Galadi

Echchelh

2019

Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 20

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“…The tail current component, i tail , is decided purely by voltages over other components, which are v tail , v d , and v C ge , yielding three small-signal transconductors G tailvtail , G tailv d , and G tailv cge that can be acquired by partial derivative similar to (24) and (25). Then, the equivalent current source is…”

Section: E Igbt Nbmmentioning

confidence: 99%

“…Its major shortcoming is that the stored values for transient waveforms need to be adjusted repeatedly along with the variation of electromagnetic environment for accurate results. The NBM is widely used in offline device-level tools such as SaberRD to provide every detail of the circuit accurately [25], [26]. Another merit is the versatility: the model is deemed to be able to represent a real IGBT under most of the conditions without changing its parameters.…”

Section: Introductionmentioning

confidence: 99%

Detailed Device-Level Electrothermal Modeling of the Proactive Hybrid HVDC Breaker for Real-Time Hardware-in-the-Loop Simulation of DC Grids

Lin

Dinavahi

2018

IEEE Trans. Power Electron.

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This paper proposes a series of proactive hybrid highvoltage direct-current (HVDC) breaker (HHB) electromagnetic transient models that can be implemented in hardware-in-the-loop (HIL) emulation for real-time execution on the field-programmable gate array (FPGA). To achieve high fidelity, an HHB model should have the same configuration as the real one, and three different models for an insulated-gate bipolar transistor (IGBT), i.e., a twostate switch model, a curve-fitting model, and an improved nonlinear behavioral model, are proposed to satisfy different accuracy and simulation speed requirements. Since designing an HHB with hundreds of IGBTs in a massive array would lead to an extremely heavy computational burden as well as to a high FPGA resource utilization, circuit partitioning is applied to each model, which enables decomposition into a number of physically independent subcircuits with smaller matrix dimension to exploit parallel implementation. Meanwhile, low hardware resource demand is achieved by using one of the subcircuits to represent the rest since they are identical. As the IGBTs produce a significant amount of heat, which in turn affects their performance, an electrothermal network is added as part of the model to provide specific information about the device's operation status including the junction temperature. The models are applied to a three-terminal HVDC system, where line faults are simulated to activate HHB protection sequence. Comparison of device-level and system-level performance from HIL emulation with those of commercial offline simulation tools validates the accuracy of the proposed models as well as the efficacy of the solution approach. Index Terms-Field-programmable gate array (FPGA), hardware design, high-voltage direct current (HVDC), hybrid HVDC breaker (HHB), insulated-gate bipolar transistor (IGBT), modular multilevel converter (MMC), multiterminal HVDC (MTDC), parallel processing, partitioning algorithm, real-time systems. NOMENCLATURE CFM Curve-fitting model. LCS Load commutation switch. MB Main breaker. MOV Metal oxide varistor. NBM Nonlinear behavioral model.

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An efficient semi-mathematical model for co-pack IGBT

Chen

Deng

et al. 2011

2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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An IGBT behavioural model based on curve fitting methods

Cited by 7 publications

References 8 publications

A SPICE IGBT Model with easy parameters extraction

A SPICE IGBT Model with easy parameters extraction

Detailed Device-Level Electrothermal Modeling of the Proactive Hybrid HVDC Breaker for Real-Time Hardware-in-the-Loop Simulation of DC Grids

An efficient semi-mathematical model for co-pack IGBT

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