An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage

Rode, Johann C.; Chiang, Han-Wei; Choudhary, Prateek; Jain, Vibhor; Thibeault, B.J.; Mitchell, William J.; Rodwell, M.J.W.; Urteaga, M.; Loubychev, D.; Snyder, Andrew; Wu, Ying; Fastenau, J. M.; Liu, Amy W. K.

doi:10.1109/jeds.2014.2363178

Cited by 9 publications

(2 citation statements)

References 14 publications

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“…An anisotropic etch is, therefore, used to thin the emitter semiconductor, enabling shorter etch times and thereby minimizing L undercut . Prior to wet-etching [17], [18]. As a result, the emitter end undercut has been curtailed from 220 nm per end to 50 nm (Fig.…”

Section: A Emitter End Undercutmentioning

confidence: 99%

Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth

Rode¹,

Chiang²,

Choudhary³

et al. 2015

IEEE Trans. Electron Devices

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Recent improvements in the fabrication technology of InGaAs/InP heterobipolar transistors have enabled highly scaled transistors with power gain bandwidths above 1 THz. Limitations of the conventional fabrication process that reduce RF bandwidth have been identified and mitigated, among which are high resistivity base ohmic contacts, resistive base electrodes, excessive emitter end undercut, and insufficient undercut of largediameter base posts. A novel two-step deposition process for self-aligned metallization of sub-20-nm bases has been developed and demonstrated. In the first step, a metal stack is directly evaporated onto the base semiconductor without any lithographic processing so as to minimize contamination from resist/developer chemistry. The composite metal stack exploits an ultrathin layer of platinum that controllably reacts with base, yielding low contact resistance, as well as a thick refractory diffusion barrier, which permits stable operation at high current densities and elevated temperatures. Further reduction of overall base access resistance is achieved by passivating base and emitter semiconductor surfaces in a combined atomic layer deposition Al 2 O 3 and plasma-enchanced chemical vapor depositon SiN x sidewall process. This technology enables the deposition of low-sheetresistivity base electrodes, further improving overall base access resistance and f max bandwidth. Additional process enhancements include the significant reduction of device parasitics by scaling base posts and controlling emitter end and base postundercut.

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Section: A Emitter End Undercutmentioning

confidence: 99%

Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth

Rode¹,

Chiang²,

Choudhary³

et al. 2015

IEEE Trans. Electron Devices

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“…InP HBTs with 120 nm emitter width exhibit an

f_{\max}

of more than 1 THz (). Common to both InP mm‐wave transistor technologies is the relatively high device breakdown voltage, which enables significant RF power generation even at frequencies approaching 1 THz: the breakdown voltage

V_{normalBD, italicCEO}

of 900 GHz InP HBTs exceeds 4 V (), and the highest scaled THz InP HEMTs can still be operated at above 1.5 V supply voltage. On the other hand, the 500 GHz SiGe HBTs display an open‐base breakdown voltage () of only

V_{normalBD, italicCEO}

= 1.6 V. Future higher scaled SiGe HBTs are expected to exhibit even lower breakdown voltages.…”

Section: Introductionmentioning

confidence: 99%

SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications

Weimann

Stoppel

Schukfeh

et al. 2016

Phys. Status Solidi A

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We present a wafer-level heterointegrated indium phosphide double heterobipolar transistor on silicon germanium bipolarcomplementary metal oxide semiconductor (InP DHBT on SiGe BiCMOS) process which relies on adhesive wafer bonding. Subcircuits are co-designed in both technologies, SiGe BiCMOS and InP DHBT, with more than 300 GHz bandwidth microstrip interconnects. The 250 nm SiGe HBTs offer cutoff frequencies around 200 GHz, the 800 nm InP DHBTs exceed 350 GHz. Heterointegrated signal sources are demonstrated including a 328 GHz quadrupling source with −12 dBm RF output power. A common design kit for full InP DHBT/SiGe BiCMOS co-design was set up. The technology is being opened to third-party customers through IHP's multi-purpose wafer foundry interface. Microphotograph of InP DHBT / SiGe BiCMOS wafer

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