2008 15th IEEE International Conference on Electronics, Circuits and Systems 2008
DOI: 10.1109/icecs.2008.4674913
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An innovative sub-32nm SRAM voltage sense amplifier in double-gate CMOS insensitive to process variations and transistor mismatch

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“…Innovative circuits using the independent double gate function, as the threshold voltage controlled by the back gate voltage, are today present in the literature Refs. [26][27][28][29][30][31].…”
Section: Resultsmentioning
confidence: 99%
“…Innovative circuits using the independent double gate function, as the threshold voltage controlled by the back gate voltage, are today present in the literature Refs. [26][27][28][29][30][31].…”
Section: Resultsmentioning
confidence: 99%