“…Amorphous silicon carbonitride films have been obtained through various deposition techniques including both physical vapor deposition (PVD) and chemical vapor deposition (CVD). In particular, different magnetron PVD technologies (DC [17,24] RF [17,18] or high power pulse magnetron sputtering [17]), as well as vapor transport-CVD [16] or different plasma enhanced CVD (PECVD) technologies (low frequency [13,23,[25][26][27], radio frequency [2,[4][5][6][7][8][9]12,14,15], microwave, [1,19,22,28] remote PECVD [3,10,11] or atmospheric pressure PECVD [20,21]), were carefully examined in the literature. Adjusting the deposition conditions (type and concentration of precursor, additional reactants, substrate temperature, type of carrier gas…) allows tuning both the composition and the bonding configuration that greatly affect material properties (electronic properties [22], gas transport [26], …).…”