An instrumental solution to the phenomenon of negative capacitances in semiconductors

Analysis of negative capacitance and self-heating in organic semiconductor devices

“…36 Numerous explanations 5 (and references therein) are named 37 as origin or the negative capacitance is considered a parasitic 38 measurement effect. 6 First occurrence of negative capaci-39 tance in organic LEDs dates back about a decade. 7,8 In gen-40 eral, the same structure also exhibits positive capacitance at 41 different measurement conditions such as frequency, applied 42 voltage, or temperature.…”

“…The electrical model is extended by the heat equation 94 (6), where the temperature is given by T. We assume that 95 heat transfer in the device takes place by thermal conduction 96 and that thermal exchange with the surrounding is based on 97 convection and thermal radiation. The heat transfer is calcu-98 lated for the entire domain of the hole-only device.…”

Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

“…Wu et al stated that the negative capacitance can be explained by considering the loss of interface charge at occupied states below the Fermi level due to impact ionization. Instrumental problems such as parasitic inductance or poor measurement experiment calibration have also been considered to explain the negative capacitance [21]. The existence of interface states, the interfacial layer at the MS interface, and the series resistance of the device have been provided as other explanations for the negative capacitance [22].…”

On the Frequency C-V and G-V Characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/n-GaAs Schottky Barrier Diodes

“…It is known that the existence of an insulator layer, native or deposited at metalsemiconductor (MS) interface, changes the C-V and G/ω characteristics of the diode. Negative capacitance (NC) and anomalous peak have been observed in the forward bias C-V characteristics of MS or MIS SBDs [10][11][12][13][14][15][16][17][18]. The NC has been attributed to the interface states, the contact injection and minority carrier injection effects * corresponding author; e-mail: farukozdemir@sdu.edu.tr and the anomalous peak can occur due to interface states (N ss ) and R s [19,20].…”

“…The NC effect reported in the literature has been referred to as "anomalous" or "abnormal" [12]. NC measured experimentally has sometimes been attributed to instrumental problems, such as parasitic inductance or poor measurement experiment calibration [12,15]. On the other hand, the inductive effect at a low frequency and capacitance arise from the highlevel injection of minority carriers into the bulk semiconductor during the current transport only at forward bias voltage [6,9].…”