1993
DOI: 10.1016/0924-4247(93)80114-v
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An integrated sensor for invasive blood-velocity measurement

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Cited by 27 publications
(6 citation statements)
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“…Neglecting the two nonlinear terms the temperature gradient can be expressed as (7) At 300 , , at 100 , the temperature gradient of the diode can be calculated as Fig. 7.…”
Section: Simulation and Theoretical Investigationmentioning
confidence: 99%
See 1 more Smart Citation
“…Neglecting the two nonlinear terms the temperature gradient can be expressed as (7) At 300 , , at 100 , the temperature gradient of the diode can be calculated as Fig. 7.…”
Section: Simulation and Theoretical Investigationmentioning
confidence: 99%
“…While SOI diode temperature sensors have been utilized for low to medium level temperature monitoring in different applications (e.g., invasive blood velocity measurements [7], temperature rise in SOI devices [8], wall shear stress measurements [9], bonding stress sensing in 3-D chips [10]), there are only few reports that investigate or analyze the performance of SOI diodes based temperature sensors to temperatures up to or beyond 250 C [11]- [13]. One of these [11], describes a work function type SOI diode temperature sensor and compares its performance with that of a diode on bulk silicon substrate.…”
Section: Introductionmentioning
confidence: 99%
“…In the case of thermoelectric flow sensors, the presence of a diode/transistor provides an excellent platform to locate the sensor in the hottest zone of the heating element, which dramatically improves the sensitivity of the device [34]. However, due to some serious drawbacks such as high power consumption and low heat flux, only limited studies have been focused on applying this method [43][44][45]. By contrast, thermoresistive sensors have been widely used in thermal sensing mechanisms.…”
Section: Silicon-based Hot-wire/film Mems Thermal Flow Sensorsmentioning
confidence: 99%
“…In these days, with increasing demands for complex, multifunctional electronics in compact, lightweight format, multifunctionality is a major trend in optoelectronics, requiring light emitting, light harvesting, sensing performance, light communications, etc. The high reliability/stability and ultrafast response time of GaN-/AlGaInP-based micro-LEDs have been explored as the potential platform of the multifunctional optoelectronic devices in various applications such as visible light communication and sensors. Temperature-dependent physical properties of inorganic semiconductors have been studied to characterize pressure, flow, humidity, stress, and gas concentration for environmental monitoring and protection system. Thus, micro-LED-based sensors could greatly increase the integration capability and functionality of not only portable and wearable devices such as personal computers, smartphones, watches, augmented reality, and virtual reality but also future neutral network devices.…”
Section: Introductionmentioning
confidence: 99%