An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT

Fletcher, A.S. Augustine; Nirmal, D.; Ajayan, J.; Arivazhagan, L.

doi:10.1007/s12633-020-00549-4

Cited by 28 publications

(8 citation statements)

References 41 publications

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“…The high value of TBR at the interface of high thermal conductivity substrate and GaN could be reduced and has additional advantage if it has a better thermal coupling and fewer interface defects while low thermal conductivity like sapphire has a less significant influence of TBR on transporting heat [43]. [41,44]. (1994) [5].…”

Section: The Influence Of Different Substrates On Gan Hemt Devicementioning

confidence: 99%

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Hsu

Lai

et al. 2021

Micromachines

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GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently the main focus of the industry to reduce the cost as well as to integrate GaN with Si-based components. However, the direct growth of GaN on Si has the challenge of high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the GaN/Si heterointerface due to both lattice and thermal mismatches between GaN and Si. In this article, we will review the current status of GaN on Si in terms of epitaxy and device performances in high frequency and high-power applications. Recently, different substrate structures including silicon-on-insulator (SOI) and engineered poly-AlN (QST®) are introduced to enhance the epitaxy quality by reducing the mismatches. We will discuss the development and potential benefit of these novel substrates. Moreover, SOI may provide a path to enable the integration of GaN with Si CMOS. Finally, the recent development of 3D hetero-integration technology to combine GaN technology and CMOS is also illustrated.

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Section: The Influence Of Different Substrates On Gan Hemt Devicementioning

confidence: 99%

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Hsu

Lai

et al. 2021

Micromachines

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“…16 In recent years, SiC has emerged as the most preferred substrate for AlGaN/GaN HEMTs, however it has a 3.8% of misalignment with GaN. 16 The β-Ga 2 O 3 is a novel material with a large band gap that can be employed as a substrate for AlGaN/GaN based HEMTs, because of its decreased lattice discrepancy of 2.8% as compared to GaN. 17 The β-Ga 2 O 3 materials are becoming more appealing for power electronics applications due to their low cost, good native quality, and larger band gap.…”

Section: Introductionmentioning

confidence: 99%

“…During the development of HEMT, another important consideration is lattice matching between GaN and the material used as a substrate. Sapphire has a 13% lattice mismatch with GaN material 16 . In recent years, SiC has emerged as the most preferred substrate for AlGaN/GaN HEMTs, however it has a 3.8% of misalignment with GaN 16 .…”

Section: Introductionmentioning

confidence: 99%

“…Sapphire has a 13% lattice mismatch with GaN material 16 . In recent years, SiC has emerged as the most preferred substrate for AlGaN/GaN HEMTs, however it has a 3.8% of misalignment with GaN 16 . The β ‐Ga 2 O 3 is a novel material with a large band gap that can be employed as a substrate for AlGaN/GaN based HEMTs, because of its decreased lattice discrepancy of 2.8% as compared to GaN 17 .…”

Section: Introductionmentioning

confidence: 99%

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Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications

Rao

Singh²,

Lenka

et al. 2022

Int J RF Mic Comp-Aid Eng

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In this piece of work, a recessed gate field-plated AlGaN/AlN/GaN HEMT on β-Ga 2 O 3 substrate is proposed and its performance characteristics are compared with HEMT structure employing a recessed gate (depth of 25, 30 and 35 nm) without field-plate. The device is simulated to obtain breakdown voltage, microwave frequency characteristics (f T , f max ) and JFOM using Atlas TCAD. The cut-off frequency and maximum frequency of oscillations are 420 and 720 GHz, respectively, which are excellent than those reported in recent studies. For 20 nm gate length, the suggested HEMT achieves the maximum JFOM of 45.3 THz-V. These f T , f max and JFOM demonstrate that the proposed HEMT on β-Ga 2 O 3 substrate is an excellent candidate for emerging microwave and millimetre wave applications.

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“…GaN high electron mobility devices (HEMTs) due to their several advantages like distinctive 2DEG, high sheet carrier density, high electron mobility, high breakdown voltage, and high frequency operation range has been proved to have a multitude of potential applications in random forest (RF) and microwave domains. [1][2][3] In order to further enhance the performance, the research focus for the past few years has been greatly inclined towards device stack engineering and device scaling. [4][5][6][7] Several novel device configurations like NbN gated HEMTs, 8 tri-gate junction HEMTs (tri-JHEMTs), 9 p-n junction (PNJ) HEMTs 10 have been introduced.…”

mentioning

confidence: 99%

Multilayer perceptron–random forest based hybrid machine learning–neural network model for GaN high electron mobility transistor's parameter estimations

Mishra

Raut

Sehra

et al. 2022

Int J RF Mic Comp-Aid Eng

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An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT

Cited by 28 publications

References 41 publications

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications

Multilayer perceptron–random forest based hybrid machine learning–neural network model for GaN high electron mobility transistor's parameter estimations

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An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT

Cited by 28 publications

References 41 publications

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Simulation modelling of III‐Nitride / β ‐Ga 2 O 3 Nano‐HEMT for microwave and millimetre wave applications

Multilayer perceptron–random forest based hybrid machine learning–neural network model for GaN high electron mobility transistor's parameter estimations

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Product

Resources

About

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications