An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate

Chen, S. C.; Lou, Jen‐Chung; Chien, Chao-Hsin; Liu, Po–Tsun; Chang, T. C.

doi:10.1016/j.tsf.2005.01.023

Cited by 23 publications

(9 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This produces hafnium-silicate-like formation due to interdiffusion during PDA. [13][14][15] It was noticed that sample C has the least increase in thickness after PDA, which was indicative of less IL growth. This was attributed to the combination of the strain and thickness effect of the SOI layer.…”

Section: Methodsmentioning

confidence: 97%

Experimental Study of ALD HfO[sub 2] Deposited on Strained Silicon-on-Insulator and Standard SOI

Tapily

Shrestha

et al. 2008

J. Electrochem. Soc.

View full text Add to dashboard Cite

HfO 2 films of 4 nm were deposited by atomic layer deposition on silicon-on-insulator ͑SOI͒ substrates with various amounts of intentionally introduced lattice strain and several film thicknesses. After postdeposition annealing ͑PDA͒, the samples were studied by Rutherford backscattering spectroscopy, Raman spectroscopy, high-resolution transmission electron microscopy ͑HRTEM͒, electron energy-loss spectroscopy ͑EELS͒, and X-ray photoelectron spectroscopy ͑XPS͒. The as-deposited HfO 2 film showed a good stoichiometry and thickness uniformity. The strain in strained SOI ͑sSOI͒ layers remained after high-temperature PDA at 1100°C. HRTEM images showed that, while HfO 2 films on standard nonstrained SOI became polycrystalline after PDA at 600°C, HfO 2 films on sSOI remained amorphous. The strain in the sSOI layer also suppressed the interlayer ͑IL͒ growth during PDA. The EELS and XPS results confirmed the interdiffusion across the HfO 2 /Si interface. The XPS data also showed that the formation of Hf-O-Si bonds depends on the SOI lattice strain and thickness. The SOI thickness is critical to reduce the formation of silicate in the IL.Hafnium-based high-K dielectrics have been extensively studied as a replacement for Si dioxide or Si oxynitride ͑SiO x N y ͒-based gate dielectrics in future generation complementary metal-oxide semiconductor devices. 1,2 However, an unstable interface with Si limits the equivalent oxide thickness scalability, and the accumulation of high fixed charge degrades the carrier mobility of high-K dielectrics. 3 Silicon-on-insulator ͑SOI͒ wafer technology reduces parasitic effects and requires less current for switching. 4 Substrates with a higher mobility, such as strained Si and Ge, help to compensate for the reduced mobility of a high-K gate stack. 5,6 Combining SOI with strained Si technology into strained SOI ͑sSOI͒ significantly increases the device speed and reduces power consumption. 7,8 It has been reported that the strained Si is stable up to an annealing temperature of 1000°C for 30 s. 9,10 Until now, the effect of strained Si in sSOI on HfO 2 /Si interlayer growth and HfO 2 quality has remained unclear. In this paper, we deposited 4 nm HfO 2 film by atomic layer deposition ͑ALD͒ on SOI and sSOI substrates with a different amount of strain and various thicknesses. The effect of high-temperature annealing on strain relaxation was studied and the effects of the strained Si layer thickness and the amount of strain on the interlayer ͑IL͒ properties were then evaluated. ExperimentalSilicon substrates were cleaned by dipping in 2% HF for 4 min followed by a deionized water rinse to remove native oxide, and were immediately transferred to the ALD reactor chamber for HfO 2 deposition. The engineered substrates ͓SOI, sSOI, and extra-strained Si ͑xsSOI͔͒ listed in Table I were prepared by Smart Cut technology. 11 Strained Si and xsSOI were initially grown epitaxially on Si 0.8 Ge 0.2 and Si 0.7 Ge 0.3 , respectively. The thickness of the top Si layers was measured by spectroscopic ellipsometer...

show abstract

Section: Methodsmentioning

confidence: 97%

Experimental Study of ALD HfO[sub 2] Deposited on Strained Silicon-on-Insulator and Standard SOI

Tapily

Shrestha

et al. 2008

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…where A is the Richardson constant, E is the electric field, and Φ B is the Schottky barrier height 57,58 . As expressed in Eq.…”

Section: Resultsmentioning

confidence: 99%

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

et al. 2020

View full text Add to dashboard Cite

Resistive random-access memory (ReRAM) devices based on halide perovskites have recently emerged as a new class of data storage devices, where the switching materials used in these devices have attracted extensive attention in recent years. Thus far, three-dimensional (3D) halide perovskites have been the most investigated materials for resistive switching memory devices. However, 3D-based memory devices display ON/OFF ratios comparable to those of oxide or chalcogenide ReRAM devices. In addition, perovskite materials are susceptible to exposure to air. Herein, we compare the resistive switching characteristics of ReRAM devices based on a quasi-two-dimensional (2D) halide perovskite, (PEA) 2 Cs 3 Pb 4 I 13 , to those based on 3D CsPbI 3. Astonishingly, the ON/OFF ratio of the (PEA) 2 Cs 3 Pb 4 I 13-based memory devices (10 9) is three orders of magnitude higher than that of the CsPbI 3 device, which is attributed to a decrease in the high-resistance state (HRS) current of the former. This device also retained a high ON/OFF current ratio for 2 weeks under ambient conditions, whereas the CsPbI 3 device degraded rapidly and showed unreliable memory properties after 5 days. These results strongly suggest that quasi-2D halide perovskites have potential in resistive switching memory based on their desirable ON/OFF ratio and long-term stability.

show abstract

“…Generally, the high-k films deposited at low temperature usually exhibit higher current leakage due to numerous traps in the HfO 2 film. Therefore, in order to reduce the traps and improve the properties, the high-temperature annealing is generally applied for PVD-deposited high-k films [9][10][11]. Nevertheless, the high-temperature process might cause the HfO 2 films crystallize and the formation of thicker parasitic oxide at the interface between HfO 2 and Si substrate, these phenomena result in the unexpected leakage current via grain boundaries of HfO 2 film and effective dielectric constant decreased [12].…”

Section: Introductionmentioning

confidence: 99%

Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment

Yang

Chang

Chen

et al. 2011

Solid-State Electronics

View full text Add to dashboard Cite

An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate

Cited by 23 publications

References 7 publications

Experimental Study of ALD HfO[sub 2] Deposited on Strained Silicon-on-Insulator and Standard SOI

Experimental Study of ALD HfO[sub 2] Deposited on Strained Silicon-on-Insulator and Standard SOI

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment

Contact Info

Product

Resources

About