An interferometric scanning microwave microscope and calibration method for sub-fF microwave measurements

Dargent, Thomas; Haddadi, Kamel; Lasri, T.; Nicolas, Clément; Ducatteau, D.; Legrand, Bernard; Tanbakuchi, Hassan; Théron, Didier

doi:10.1063/1.4848995

Cited by 62 publications

(53 citation statements)

References 13 publications

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“…1 illustrates the selected architecture to implement an IBR. Based on Dargent et alwork [6], reflectometer architecture is simplified to reduce costs and to be suited for RF …”

Section: A Test-bench Implementationmentioning

confidence: 99%

Sub-fF 130 nm MOS Varactor Characterization Using 6.8 GHz Interferometry-Based Reflectometer

Ferreira¹,

Donche²,

Delalin³

et al. 2015

IEEE Microw. Wireless Compon. Lett.

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Nanometer-scaled communication devices for microwave and millimeter wave applications motivated innovative techniques in modeling and characterization. In this letter, an interferometry-based reflectometer (IBR), comprising Vector Network Analyser (VNA) and commercial devices, is implemented. Using sub-fF 130 nm thick-oxide accumulation MOS varactors from ST Microelectronics, IBR and VNA measurements are compared to a silicon-based model. A capacitance from 0.9 to 1.6 fF around 6.8 GHz is estimated. IBR demonstrates a root-mean-squared (RMS) error related to silicon-based model of 60 aF, while VNA has 70 aF in its best case. The mean accuracy is estimated at 40 aF and 11 aF respectively for VNA best case and IBR in C-V measurements. This letter demonstrates that IBR solution has smaller RMS error and better accuracy for C-V measurements than VNA.Index Terms-High-impedance microwave and millimeter wave instrumentation, interferometry-based reflectometer, sub-fF MOS varactor.

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“…1 illustrates the selected architecture to implement an IBR. Based on Dargent et alwork [6], reflectometer architecture is simplified to reduce costs and to be suited for RF …”

Section: A Test-bench Implementationmentioning

confidence: 99%

Sub-fF 130 nm MOS Varactor Characterization Using 6.8 GHz Interferometry-Based Reflectometer

Ferreira¹,

Donche²,

Delalin³

et al. 2015

IEEE Microw. Wireless Compon. Lett.

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“…Interferometric techniques create, by various means, a signal bin j such that, by destructive interference, the wave scattered by the DUT (b) is cancelled out. This results in a measurement of r equal (or very close) to zero, since b=-bin j , and r=(b+bin j )/a where a is the incident wave [5]- [8]. Moreover, a two-port technique has also been proposed and proven to achieve an improvement in stability and accuracy ofr measurement [4].…”

Section: Introductionmentioning

confidence: 93%

“…A very high Q (narrowband) cancellation is affected by any disturbances present in the measurement system and the environment (e.g., phase/amplitude variation due to cable flexing, temperature variations). The proposed setup reduces from two couplers between the cancellation plane and the DOT [5] to one, thus reducing the Q of the cancellation.…”

Section: Proposed Interferometric Techniquementioning

confidence: 99%

An I/Q-mixer-steering interferometric technique for high-sensitivity measurement of extreme impedances

Vlachogiannakis

Shivamurthy

Pino

et al. 2015

2015 IEEE MTT-S International Microwave Symposium

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An all-electronic, I/Q-mixer-based interferometric technique to reduce measurement noise in the characterization of extreme impedances is presented. The proposed technique employs a standard vector network analyzer, an arbitrary waveform generator and an I/Q-mixer chain to generate a very stable cancellation signal. This hardware implementation enables frequency scalability, due to the large commercial availability of the mentioned components, and high stability, speed and repeatability, due to the fully electronic approach. The proposed technique is embedded in a scanning microwave microscopy (SMM) setup to demonstrate a more than 50% noise reduction in the measurement of dielectric materials.

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“…We used an interferometric NSMM for investigating sub-10 nm-diameter nanodot capacitors [12]. The modeling of the nanodot capacitors was done using FEM COMSOL® multiphysics.…”

Section: B Electrical Resolutionmentioning

confidence: 99%

Electromagnetic Modeling in Near-Field Scanning Microwave Microscopy Highlighting Limitations in Spatial and Electrical Resolutions

Polovodov

Brillard

Haenssler

et al. 2018

2018 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO)

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Near-field scanning microwave microscopy (NSMM) is a scanning probe microscopy (SPM) technique that measures the local interaction of evanescent microwaves with a sample using a sharp tip probe. The traceability in NSMM is still challenging as the distribution of the electrical fields is affected by several parameters. In this effort, finite element method (FEM) based electromagnetic modeling methods are used to study the effects of the wavelength of operation and the humidity on the spatial and electrical resolutions respectively. From the simulated data, it is demonstrated that the lateral resolution is improved with increasing the frequency of operation. Furthermore, the existence and influence of a water meniscus is highlighted by fine comparison between simulated and measured data. To face these issues, an alternative near-field scanning millimeter-wave microscopy working in a controlled environment is proposed.

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An interferometric scanning microwave microscope and calibration method for sub-fF microwave measurements

Cited by 62 publications

References 13 publications

Sub-fF 130 nm MOS Varactor Characterization Using 6.8 GHz Interferometry-Based Reflectometer

Sub-fF 130 nm MOS Varactor Characterization Using 6.8 GHz Interferometry-Based Reflectometer

An I/Q-mixer-steering interferometric technique for high-sensitivity measurement of extreme impedances

Electromagnetic Modeling in Near-Field Scanning Microwave Microscopy Highlighting Limitations in Spatial and Electrical Resolutions

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