An investigation into the high strength bonding technology of wafer-to-wafer with large-scale au line

Wang, S. X.; Zhu, Julie; Jia, Shi Xing; Wu, Yu Mao

doi:10.1088/1742-6596/1209/1/012013

Cited by 1 publication

(1 citation statement)

References 4 publications

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“…This adhesive wafer bonding uses various polymers, such as polyimide [5], photoresist [6], epoxy [7], and divinyl siloxane bis-benzocyclobutene (DVS-BCB) [8,9] as an intermediate bonding material. In particular, the commercial dielectric polymer, i.e., DVS-BCB, has attracted significant attention, owing to its excellent properties, such as low dielectric constant (~2.65 for the frequency range of 10 Hz to 1 MHz), low moisture absorption, low cure temperature, high degree of planarization, low level of ionic contaminants, high optical clarity, good thermal stability, excellent chemical resistance, and good compatibility with various metallization systems [10][11][12][13][14]. Therefore, DVS-BCB is used in bonding and packaging processes for three-dimensional (3D) integrated circuit [4,15], optical [16,17], and MEMS devices [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

High-Density Patterned Array Bonding through Void-Free Divinyl Siloxane Bis-Benzocyclobutene Bonding Process

et al. 2021

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Divinylsiloxane-bis-benzocyclobutene (DVS-BCB) has attracted significant attention as an intermediate bonding material, owing to its excellent properties. However, its applications are limited, due to damage to peripheral devices at high curing temperatures and unoptimized compressive pressure. Therefore, it is necessary to explore the compressive pressure condition for DVS-BCB bonding. This study demonstrates an optimization process for void-free DVS-BCB bonding. The process for obtaining void-free DVS-BCB bonding is a vacuum condition of 0.03 Torr, compressive pressure of 0.6 N/mm2, and curing temperature of 250 °C for 1 h. Herein, we define two factors affecting the DVS-BCB bonding quality through the DVS-BCB bonding mechanism. For strong DVS-BCB bonding, void-free and high-density chemical bonds are required. Therefore, we observed the DVS-BCB bonding under various compressive pressure conditions at a relatively low temperature (250 °C). The presence of voids and high-density crosslinking density was examined through near-infrared confocal laser microscopy and Fourier-transform infrared microscopy. We also evaluated the adhesion of the DVS-BCB bonding, using a universal testing machine. The results suggest that the good adhesion with no voids and high crosslinking density was obtained at the compressive pressure condition of 0.6 N/mm2. We believe that the proposed process will be of great significance for applications in semiconductor and device packaging technologies.

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