An investigation of contact resistance between metal electrodes and amorphous gallium–indium–zinc oxide (a-GIZO) thin-film transistors

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

“…22,27 R C was extracted using the transmission-line method. 28 As shown in Fig. 2(a),R C can reach values comparable to the channel resistance of short channel TFTs (L CH Շ 2 lm), and reduce l eff to values <10 cm 2 V À1 s À1 (Fig.…”

Metal oxide semiconductor thin-film transistors for flexible electronics

“…Controlling the contact resistance is especially important in short-channel devices (L Շ 5 lm), since a high R C value can lead to the degradation of both the device l FE and f T . 105,106 In a TFT, the contact resistance depends on the source/drain electrodes, 107,108 the interface metal/semiconductor, 107 the source/drain to gate contact area, 106,108 as well as specific contact treatments (plasma, temperature, etc.) performed.…”

“…109 A well-known and utilized indirect method to extract R C is the transmission-line method (TLM), which requires the linear I D -V GS curves of a series of TFTs with different channel lengths. 108 More specifically, R C can be extracted from the total TFT resistance (R T )…”

“…108 By fitting the experimental values of the R T -L plot for different V GS with a linear curve, the total contact resistance can be estimated. Alternatively, the R C can also be extracted from the ratio of two linear I D -V GS measurements taken on the same device (at two different V DS ), as explained by Campbell et al…”

Photoelectron spectroscopy study of thin Ag films deposited on to amorphous In–Ga–Zn–O surface

“…The electrical property changes of the a-IGZO based TFT are closely related to the contact materials, and electrical property changes with various S/D electrode materials (Mo, Ti, Al, Au/Ti, Au-Mn, Ti/Cu, Ag, Ti/Al/Ti, Cu/Ti, Pt) have been intensively studied [9][10][11][12][13][14][15][16][17]. These results can be understood in terms of work function values, the amount of charge transfer between the electrode and the channel layer, and other factors associated with semiconductor physics [18].…”