An Investigation of High Performance Heterojunction Silicon Solar Cell Based on n-type Si Substrate

Memarian, Nafiseh; Minbashi, Mehran; Mehrabad, Mahmoud Jalali

doi:10.21272/jnep.8(4(2)).04058

Cited by 7 publications

(4 citation statements)

References 17 publications

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“…The R S originates from the bulk and circuit terminal resistances, interface resistance formed in the junction of layers and the resistances of the contact layers [35,44]. The V OC is unaffected by the R S because overall current through the solar cell and thus through the R S is zero [36]. The J SC decreases very weakly with increasing R S as if it were constant at 37.2 mA cm −2 .…”

Section: Resistance Dependent Photovoltaic Performancementioning

confidence: 99%

“…Parametersc-Si (n)[36] CuI (p) 6.5 [37] CB effective density of states (1 cm −3 ) 2.8×1019 2.2×1018 [37] VB effective density of states (1 cm −3 )1.04×1019 1.8×1018 [37] Electron thermal velocity (cm/s) 2.3×10 7 2.2×10 7 Hole thermal velocity (cm/s) 1.65×10 7 2.13×10 7 Electron mobility (cm 2 /Vs) 1350 100 [38] Hole mobility (cm 2 /Vs) 450 43.9 [38] Shallow uniform donor density (1 cm −3…”

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confidence: 99%

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Guidelines for a highly efficient CuI/n-Si heterojunction solar cell

et al. 2020

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We report the simulation outcomes of a highly efficient CuI/n-Si heterojunction solar cell (HJSC) by SCAPS-1D simulator using the parameters obtained from spin-coated CuI thin film characterizations. The influence of thickness and doping concentration of Si substrate as well as CuI hole transport layer (HTL) on the photovoltaic (PV) parameters and built-in potential has been explored. The optimum values of the solar cell parameters are presented to attain the best result. The highest power conversion efficiency (PCE) of 22.62% with J SC of 37.25 mA cm −2 , V OC of 0.716 V and FF of 84.69% has been achieved with a 200 μm thick Si substrate and 50 nm thick CuI thin film, respectively. Finally, the resistance dependent PV performance has been investigated for the solar cell. These findings indicate that highly efficient CuI/n-Si HJSC can be designed and this can be a potential candidate compared to the organic/Si HJSC counterpart.

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Section: Resistance Dependent Photovoltaic Performancementioning

confidence: 99%

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confidence: 99%

Guidelines for a highly efficient CuI/n-Si heterojunction solar cell

et al. 2020

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“…Solar cells are mainly made of different semiconductors [2]. Depending on the p-n junction, they are divided into homo-and hetero-junction types [3], single and multi-junction types depending on the number of p-n junctions [4]. There are three generations of solar cells.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Temperature and Base Thickness on Photoelectric Parameters of Amorphous Silicon Solar Cells

Gulomov¹,

Ziyoitdinov²,

Gulomova³

2022

J. Nano- Electron. Phys.

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One of the important tasks of photovoltaics is the design of flexible solar cells that are resistant to environmental influences and designed to cover surfaces of various shapes. Therefore, pin-structured amorphous silicon-based solar cells with flexible properties were studied in this study. Amorphous silicon has a higher absorption coefficient and band gap than crystalline silicon. A high absorption coefficient proves that a high efficiency can be achieved in thin films. According to the obtained simulation results, the maximum values of the open circuit voltage, short-circuit current, fill factor and efficiency of the amorphous silicon-based solar cell were 1.2044 V, 13.49 mA/cm 2 , 80.03 % and 12.18 %, respectively, as well as achieved them at a base thickness of 35, 20, 3 and 15 µm, respectively. The effect of temperature on an amorphous silicon-based solar cell with optimal thickness was studied because amorphous silicon is very sensitive to external influences such as light intensity and temperature. Therefore, it is important to study the effect of temperature on the properties of amorphous silicon-based solar cells. As the temperature increased, the open circuit voltage decreased, but the short-circuit current, fill factor, and efficiency increased. It was found that the temperature coefficients of open circuit voltage, short circuit current, fill factor and efficiency are − 1.68×10 -3 , 2.24×10 -3 , 4.5×10 -5 and 2.27×10 -4 1/K, respectively.

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“…Because silicon exhibits good stability, a well balanced set of physical and electronic popreties [1][2][3]. However, cost reduction is the main challenge for Si solar cells due to the use of expensive silicon wafer substrates cut and the requirement of high temperature processing during junction formation [4][5][6][7][8]. Improvement of the efficiency of silicon solar cells is an essential requirement if the technology is to remain competitive with other PV technologies.…”

Section: Introductionmentioning

confidence: 99%

Development of Numerical Method for Optimizing Silicon Solar Cell Efficiency

Chahid¹,

Fedaoui²,

Nachaoui³

et al. 2017

J. Nano- Electron. Phys.

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This paper presents a development of numerical method to determine and optimize the photocurrent densities in silicon solar cell. This method is based on finite difference algorithm to resolve the continuity and Poisson equations of minority charge carriers in p-n junction regions by using Thoma's algorithm to resolve the tridiagonal matrix. These equations include several physical parameters as the absorption coefficient and the reflection one of the material under the sunlight irradiation of AM1.5 solar spectrum. In this work, we study the effect of various parameters such as thickness and doping concentration of the (emitter, base) layers on crystalline silicon solar cell perfomance. The obtained results show that the optimum energy conversion efficiency is 22.16 % with the following electrical parameters solar cell Voc  0.62 V and Jph  43.20 mAcm-2. These results are compared with experimental data and show a good agreement of our developped method.

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An Investigation of High Performance Heterojunction Silicon Solar Cell Based on n-type Si Substrate

Cited by 7 publications

References 17 publications

Guidelines for a highly efficient CuI/n-Si heterojunction solar cell

Guidelines for a highly efficient CuI/n-Si heterojunction solar cell

The Effect of Temperature and Base Thickness on Photoelectric Parameters of Amorphous Silicon Solar Cells

Development of Numerical Method for Optimizing Silicon Solar Cell Efficiency

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