An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

Terman, Lewis M.

doi:10.1016/0038-1101(62)90111-9

Cited by 1,418 publications

(443 citation statements)

References 10 publications

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“…However, the Table 2 Electrical parameters of the n-Ge MOS capacitors without or with Ti incorporation, extracted from 1-MHz C-V curves interface-state density (D it ) increases with Ti content, which is obvious from the distorted C-V curves of the LTON3 and LTON4 samples. This is confirmed by the extracted D it near midgap using Terman's method [25] for the purpose of comparison, with the largest D it for the LTON4 sample (4.1 × 10 12 eV −1 cm −2 ), as shown in Table 2. This is probably associated with the fact that stronger reaction between the Ge substrate and LaTiON film could happen as the Ti content increases, similar to the situation of HfTiO in contact with Ge [21].…”

Section: Resultssupporting

confidence: 64%

Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric

et al. 2010

Appl. Phys. A

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Ge Metal-Oxide-Semiconductor (MOS) capacitors with LaON gate dielectric incorporating different Ti contents are fabricated and their electrical properties are measured and compared. It is found that Ti incorporation can increase the dielectric permittivity, and the higher the Ti content, the larger is the permittivity. However, the interfacial and gate-leakage properties become poorer as the Ti content increases. Therefore, optimization of Ti content is important in order to obtain a good trade-off among the electrical properties of the device. For the studied range of the Ti/La 2 O 3 ratio, a suitable Ti/La 2 O 3 ratio of 14.7% results in a high relative permittivity of 24.6, low interfacestate density of 3.1 × 10 11 eV −1 cm −2 , and relatively low gate-leakage current density of 2.0 × 10 −3 A cm −2 at a gate voltage of 1 V.

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Section: Resultssupporting

confidence: 64%

Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric

et al. 2010

Appl. Phys. A

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“…To minimize the influence of these effects on the extracted interface states densities (D it ), all the measured C-V -G curves were first corrected for parasitic free C-V -G curves using "dual-frequency five-element small-signal circuit model " as shown in (Fig. 3) [19][20][21]24].…”

Section: Interface States Densities (D It ) Extraction Methodologymentioning

confidence: 99%

“…To confidently extract the interface trap charge densities (D it ) at the silicon/dielectric interface we used different available extraction methods namely: High-Low frequency method, Terman method and Conductance method. The fixed charge density (Q f ) in the dielectric was estimated from the flat-band voltage of the low-frequency C-V curve [16][17][18][19][20][21].…”

Section: Device Fabrication and C-v-g Measurementsmentioning

confidence: 99%

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Passivation effects of atomic-layer-deposited aluminum oxide

et al. 2013

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Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has recently demonstrated an excellent surface passivation for both n-and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Q f ∼ 10 12 −10 13 cm −2 ) in combination with a low density of interface states (Dit). This paper investigates the passivation quality of thin (15 nm) Al2O3 films deposited by two different techniques: plasmaenhanced atomic layer deposition (PE-ALD) and Thermal atomic layer deposition (T -ALD). Other dielectric materials taken into account for comparison include: thermally-grown silicon dioxide (SiO2) (20 nm), SiO2 (20 nm) deposited by plasma-enhanced chemical vapour deposition (PECVD) and hydrogenated amorphous silicon nitride (a-SiNx:H) (20 nm) also deposited by PECVD. With the above-mentioned dielectric layers, Metal Insulator Semiconductor (MIS) capacitors were fabricated for Q f and Dit extraction through Capacitance-Voltage-Conductance (C-V -G) measurements. In addition, lifetime measurements were carried out to evaluate the effective surface recombination velocity (SRV). The influence of extracted C-V -G parameters (Q f ,Dit) on the injection dependent lifetime measurements τ (Δn), and the dominant passivation mechanism involved have been discussed. Furthermore we have also studied the influence of the SiO2 interfacial layer thickness between the Al2O3 and silicon surface on the field-effect passivation mechanism. It is shown that the field effect passivation in accumulation mode is more predominant when compared to surface defect passivation.

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“…Corona treatment did not change the measured capacitance or flat band voltage, thus indicating that all corona deposited charge resided at the top surface of the dielectric. Figure 8b illustrates a typical CV measurement including extraction of flat band voltage and interface state density as per the Terman method [37]. An ideal MOS capacitance curve has been included for comparison (solid line).…”

Section: Interface Recombinationmentioning

confidence: 99%

Passivation of all-angle black surfaces for silicon solar cells

Rahman

Bonilla

Nawabjan

et al. 2017

Solar Energy Materials and Solar Cells

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Abstract-Optical losses at the front surface of a silicon solar cell have a significant impact on efficiency, and as such, efforts to reduce reflection are necessary. In this work, a method to fabricate and passivate nanowire-pyramid hybrid structures formed on a silicon surface via wet chemical processing is presented. These high surface area structures can be utilised on the front surface of back contact silicon solar cells to maximise light absorption therein. Hemispherical reflectivity under varying incident angles is measured to study the optical enhancement conferred by these structures. The significant reduction in reflectivity (<2%) under low incident angles is maintained at high angles by the hybrid textured surface compared to surfaces textured with nanowires or pyramids alone. Finite Difference Time Domain simulations of these dual micro-nanoscale surfaces under varying angles supports the experimental results. In order to translate the optical benefit of these high surface area structures into improvements in device efficiency, they must also be well passivated. To this end, atomic layer deposition of alumina is used to reduce surface recombination velocities of these ultra-black silicon surfaces to below 30 cm/s. A decomposition of the passivation components is performed using capacitance-voltage and Kelvin Probe measurements. Finally, device simulations show power conversion efficiencies exceeding 21% are possible when using these ultra-black Si surfaces for the front surface of back contact silicon solar cells.

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An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

Cited by 1,418 publications

References 10 publications

Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric

Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric

Passivation effects of atomic-layer-deposited aluminum oxide

Passivation of all-angle black surfaces for silicon solar cells

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