An investigation on the modeling of boron-enhanced diffusion of ultralow energy implanted boron in silicon

Marcon, J.; Coq, L. Ihaddadene-Le; Masmoudi, K.; Ketata, K.

doi:10.1016/j.mseb.2005.08.018

Cited by 4 publications

(1 citation statement)

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“…To continue scaling down p + poly‐Si gates of MOS integrated circuits, it is necessary to create very shallow junctions with strong‐concentrations of electrically active B. Two related processes limit the realization of this goal: (i) the enhanced redistribution of the B during the thermal dopant‐activation annealing, which causes B penetration through thin oxides from the p + poly‐Si gate into the underlying layers 3, and (ii) the formation of electrically inactive B clusters and B precipitates 4,5, which decreases the dopant activation rate. The use of low‐energy doping methods, co‐doping techniques, low thermal annealing temperatures, short annealing times, amorphous‐silicon layers, and thin Nitrogen‐Doped‐Silicon (NiDoS) layers have been practiced to avoid the doping depletion of p + polysilicon gate at the oxide interface 6–8.…”

Section: Introductionmentioning

confidence: 99%

Complex boron redistribution kinetics in strongly doped polycrystalline‐silicon/nitrogen‐doped‐silicon thin bi‐layers

Abadli

Mansour

Pereira

2012

Cryst. Res. Technol.

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We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 • C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P + ) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 • C and 700 • C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model.

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