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The CIGS thin films are prepared by co-evaporation of elemental In, Ga and Se on the substrates of Mo-coated glasses at 400°C followed by co-evaporation of elemental Cu and Se at 550°C. We study the structural and electrical properties using XRD, XRF and Hall effect measurements. In general, Cu(In,Ga) 5 Se 8 phase exists when Cu/(In+Ga) ratio is from 0.17 to 0.27, Cu(In,Ga) 3 Se 5 phase exists for Cu/(In+Ga) ratio between 0.27 and 0.41, Cu 2 (In,Ga) 4 Se 7 and Cu(In,Ga) 2 Se 3.5 phases exist for Cu/(In+Ga) ratio between 0.41 and 0.61, and OVC(or ODC) and CuIn 0.7 Ga 0.3 Se 2 phases exist when Cu/(In+Ga) ratio is from 0.61 to 0.88. With the increase of Cu/(In+Ga) ratio, the carrier concentrations of the films gradually increase, but the electrical resistivity gradually decreases.