Diffusion modelling of low-energy ion-implanted BF2 in crystalline silicon: Study of fluorine vacancy effect on boron diffusion

Modeling of the transient interstitial diffusion of implanted atoms during low-temperature annealing of silicon substrates

“…According to 53 , the impurity profile for this diffusion mechanism has a form of the Gaussian distribution. Really, the boron concentration profile calculated in 59 represents the Gaussian distribution and disagrees with the experimental data. On the other hand, as follows from the experimental data 58 , the boron concentration profile after annealing for 1.5 h begins to get a convex form similar to the Gaussian distribution.…”

“…It means that the "tail" region is formed due to the long-range migration of nonequilibrium boron interstitials. It is necessary to note that modeling of the experimental data obtained in 58 was carried out earlier in the paper 59 . The model of Uematsu 60 was used for simulation of boron diffusion in 59 .…”

“…It is necessary to note that modeling of the experimental data obtained in 58 was carried out earlier in the paper 59 . The model of Uematsu 60 was used for simulation of boron diffusion in 59 . It is supposed in this model that there is a local thermodynamic equilibrium between substitutionally dissolved boron atoms, silicon self-interstitials, and boron interstitials.…”