2006
DOI: 10.1016/j.aeue.2005.10.017
|View full text |Cite
|
Sign up to set email alerts
|

An ISM band CMOS power amplifier design for WLAN

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2010
2010
2022
2022

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(3 citation statements)
references
References 2 publications
0
3
0
Order By: Relevance
“…Performance characteristics of the proposed RFPA with active inductor-based output matching network in comparison with some other works [3,[17][18][19] are summarized in Table 3. Although the output power of the proposed RFPA is lower than that in [17][18][19], its required input power is lower than [18,19], while it has reached to a maximum PAE of 70%.…”
Section: Proposed Rfpa With Tunable Active Inductor-based Output Matcmentioning
confidence: 99%
See 1 more Smart Citation
“…Performance characteristics of the proposed RFPA with active inductor-based output matching network in comparison with some other works [3,[17][18][19] are summarized in Table 3. Although the output power of the proposed RFPA is lower than that in [17][18][19], its required input power is lower than [18,19], while it has reached to a maximum PAE of 70%.…”
Section: Proposed Rfpa With Tunable Active Inductor-based Output Matcmentioning
confidence: 99%
“…Although the output power of the proposed RFPA is lower than that in [17][18][19], its required input power is lower than [18,19], while it has reached to a maximum PAE of 70%.…”
Section: Proposed Rfpa With Tunable Active Inductor-based Output Matcmentioning
confidence: 99%
“…Low noise figure and high linearity are important figures of merits for designing an LNA [2] which can also be used for Worldwide Interoperability for Microwave Access (WiMAX) apps [3][4]. LNA and PA designs can be with chips as well as with transistors such as Complementary Metal Oxide Semiconductor (CMOS), heterojunction bipolar transistor (HBT), field-effect transistor (FET), High-electronmobility transistor (HEMT) and Pseudomorphic High Electron Mobility Transistor (pHEMT) [5][6]; the biasing is prominent for the selection [7]. The waves emitted from the antenna have to be 1556 amplified first with PA and it is essential to form a stable [8] and efficient [9] circuit according to practice.…”
Section: Introductionmentioning
confidence: 99%