An open circuit voltage decay system for performing injection dependent lifetime spectroscopy

Abstract

Of all of the material parameters associated with a semiconductor, the carrier lifetime is by far the most complex and dynamic, being a function of the dominant recombination mechanism, the equilibrium number of carriers, the perturbations in carriers (e.g., carrier injection), and the temperature, to name the most prominent variables. The carrier lifetime is one of the most important parameters in bipolar devices, greatly affecting conductivity modulation, on-state voltage, and reverse recovery. Carrier lifetime is also a useful metric for device fabrication process control and material quality. As it is such a dynamic quantity, carrier lifetime cannot be quoted in a general range such as mobility; it must be measured. The following describes a stand-alone, wide-injection range open circuit voltage decay system with unique lifetime extraction algorithms. The system is initially used along with various lifetime spectroscopy techniques to extract fundamental recombination parameters from a commercial high-voltage PIN diode.

An Open Circuit Voltage Decay System for a Flexible Method for Characterization of Carriers’ Lifetime in Semiconductor

“…We observe the same behaviour but with different amplitude which is due to the increasing of the generation rate. Our results are similar to those obtained in literature, Lacouture et al [20]. In order to investigate the impact of carrier injection level on the lifetime carrier, the light intensity dependence was investigated.…”

“…We observe the same behaviour but with different amplitude which is due to the increasing of the generation rate. Our results are similar to those obtained in literature, Lacouture et al [20]. The design of the silicon diode (Vishay 1N4007) is unknown.…”

Assembling n-Bi2MoO6 Nanosheets on Electrospun p-CuAl2O4 Hollow Nanofibers: Enhanced Photocatalytic Activity Based on Highly Efficient Charge Separation and Transfer

“…OCVD measurement is monitoring the subsequent decay of photovoltage ( v ( t )) after turning off the illumination. The response time (τ n ) can be calculated by the normalized equation: − where k , T , e , and d v ( t )/d­( t ) are the Boltzmann constant, temperature in Kelvin, elementary charge, and open circuit voltage transient, respectively, as shown in Figure E. However, it is important to notice that the above equation could only be appropriate when the voltage decay is linear with a first-order dependence on time, which means the recombination of charge carriers with electrolyte is dominating, rather than the recombination of photoexcited electrons and holes within samples .…”

On the design of measuring circuit for OCVD method

“…The maximum forward current I F through DUT is limited by series resistance R S (0.36 Ω). Resistor is made by three parallel connected power foil-resistors BDS100 produced by TE-Connectivity with the nominal value of 1 Ω and inductance 6 nH[12]. Thus, the maximum forward current I F is set to 140 A with supplying voltage 52 V. The voltage source V SS is equipped by blocking capacity C that consist from four electrolytic capacitors 10 mF/50 V type B41231 connected in parallel; 16 electrolytic capacitors 1 mF/50 V type WCAP-ASLI and four capacitors 10 µF/63 V type F161.…”