An optimally designed process for submicrometer MOSFET's

Shibata, Tadashi; Hieda, K.; Sato, Masaki; Konaka, M.; Dang, Ryo; Iizuka, H.

doi:10.1109/t-ed.1982.20738

Cited by 38 publications

(2 citation statements)

References 10 publications

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“…Indeed, while the dimensions at the time were very large compared to what we are accustomed to now, we must remember each of these technologies as being at the forefront of what could be achieved at the time yet with difficulties similar to what we are facing today with advanced tools. With a silicided contact formed in a self-aligned manner (no need for lithography), even if the metal above did not fully cover the contact areas, the conducting silicide would redistribute the current where it was expected and make the process more stable and reliable (8)(9)(10). Thus, the silicided contact eliminated or drastically reduced two critical problems: device shorting and significant variations in external resistance, which were controlled, respectively, by stopping the Al spiking through the junction and by reducing the effects of contact misalignment.…”

Section: Historymentioning

confidence: 99%

(Invited) Contacts in Advanced CMOS: History and Emerging Challenges

Lavoie¹,

Adusumilli²,

Carr³

et al. 2017

ECS Trans.

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Silicide materials used as contacts in CMOS devices have evolved over many technology nodes. This article traces the often forgotten defectivity related reasons that were the primary drivers for a change in materials or process flow -evolving from Ti to Co and Ni silicides, and the more recent return to Ti-based liner silicides. The criteria used for the selection of these metal silicides have undergone a dramatic change with the advent of 3-D transistors and trench silicide contacts, and is now primarily guided by the value of interfacial contact resistivity (ρ c ). Furthermore, using results from synchrotron X-ray diffraction and pole-figure analysis, we present how phase formation and microstructure of contacts vary with Ti thickness, alternative annealing treatments, and substrate composition and orientation.We show that microstructure in very thin films can change from amorphous to epitaxial, a factor likely to become important for the contacts in upcoming generations of devices.

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Section: Historymentioning

confidence: 99%

(Invited) Contacts in Advanced CMOS: History and Emerging Challenges

Lavoie¹,

Adusumilli²,

Carr³

et al. 2017

ECS Trans.

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“…A self-aligned silicide (SALICIDE) [1] process yields lower series resistance of contacts and diffused regions [21. In a typical SALICIDE process the metal is deposited on the source-drain areas and the silicide is formed by a subsequent heat treatment.…”

Section: Introductionmentioning

confidence: 99%

Boron Redistribution During Formation of Cobalt Silicides

1992

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Redistribution of boron during the formation of the cobalt silicides Co Si CoSi and CoSi 2 has been studied. The silicides were formed by solid state reactions of cobalt deposited on boron implanted silicon. The silicide formation was determined by Rutherford backscattering spectrometry (RBS), and the resulting redistribution of boron was studied using secondary ion mass spectrometry (SIMS). The study shows that the atoms participating in the silicide formation diffuse in the growing silicide without any mutual interference. Boron atoms in the consumed silicon layer redistribute within the formed silicide layer and accumulate at the surface, while boron in the underlying unconsumed silicon is unaltered, and no accumulation due to snowplowing occurs at the silicide/silicon interface.

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Study of electronic states located at the SiSiO2 interface and within the oxide volume of VLSI MOS capacitors using capacitance and conductance measurements

Toutah¹,

Pananakakis²

1985

phys. stat. sol. (a)

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Interface state parameters are studied in MOS capacitors with insulator thickness in the range from 10 to 30 nm obtained by different technological processes. Automatic capacitance and conductance measurements are performed in a frequency range from 200 Hz up to 40 kHz. The Gpω vs. to characteristics strongly deviate from those usually obtained with thick oxide layer. The results are interpreted using the two step model developed by Eaton and Sah for about 8 nm thick insulating layers. The most important physical parameters such as the density of interface states, the electron capture cross section, and the density of traps located within oxide are deduced.

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An optimally designed process for submicrometer MOSFET's

Cited by 38 publications

References 10 publications

(Invited) Contacts in Advanced CMOS: History and Emerging Challenges

(Invited) Contacts in Advanced CMOS: History and Emerging Challenges

Boron Redistribution During Formation of Cobalt Silicides

Study of electronic states located at the SiSiO2 interface and within the oxide volume of VLSI MOS capacitors using capacitance and conductance measurements

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