An over 100 W n-GaN/n-AlGaN/GaN MIS-HEMT power amplifier for wireless base station applications

Kanamura, Masahito; Kikkawa, T.; Iwai, Taisuke; Imanishi, Kenji; Kubo, Tomohiro; Joshin, K.

doi:10.1109/iedm.2005.1609411

Cited by 41 publications

(37 citation statements)

References 10 publications

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“…9. The gain of 16.3 dB is 4 dB higher than that of GaN MIS-HEMT with SiN [1]. 3.3 RF stability We also investigated the 1 mm MIS-HEMT device power stability.…”

Section: High Power Characteristicsmentioning

confidence: 98%

High power and high gain AlGaN/GaN MIS‐HEMTs with high‐k dielectric layer

Kanamura

Ohki

Imanishi

et al. 2008

Phys. Status Solidi (c)

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High power n‐GaN/n‐AlGaN/GaN metal‐insulator‐semi‐conductor high electron mobility transistors (MIS‐HEMTs) with high‐k Ta2O5 dielectric layer were fabricated on a 3‐inch S.I.‐SiC substrate, for the first time. An n‐GaN/n‐AlGaN/GaN MIS‐HEMTs with 400 V breakdown voltage were obtained by using Ta2O5 insulating layer/n‐GaN capstructure. The single‐chip GaN MIS‐HEMTs amplifier with a Ta2O5 layer operated at 50 V achieve a high output power of 113 W with a linear gain of 16.3 dB at 2.5 GHz. We also investigated the RF stress reliability under the P3dB condition. The fluctuation of output power and drain current was lower than 5% even after 150 h stress test. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…9. The gain of 16.3 dB is 4 dB higher than that of GaN MIS-HEMT with SiN [1]. 3.3 RF stability We also investigated the 1 mm MIS-HEMT device power stability.…”

Section: High Power Characteristicsmentioning

confidence: 98%

High power and high gain AlGaN/GaN MIS‐HEMTs with high‐k dielectric layer

Kanamura

Ohki

Imanishi

et al. 2008

Phys. Status Solidi (c)

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“…Although high output power has been confirmed in the GaN-based transistors, large gate leakage current in the conventional Schottky-metal gate HFETs is a limiting factor for further increase of the output power with good reliability [1]. Use of MIS-type gate is a solution to reduce the gate leakage current, and so far very high f max has been reported in the MIS-HFET with very short gate lengths demonstrating the potential of the device configuration [2].…”

Section: Introductionmentioning

confidence: 98%

High fmax with High Breakdown Voltage in AlGaN/GaN MIS-HFETs using In-Situ SiN as Gate Insulators

Kuroda

Murata

Nakazawa

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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AlGaN/GaN heterojunction transistors (HFETs)with metal-insulator-semiconductor (MIS)-type gate structure is promising for high frequency and high power applications owing to the superior material properties together with the reduced gate leakage current. In this paper, we present a novel AlGaN/GaN MIS-HFET using so-called in-situ SiN as a gate insulator. The in-situ SiN with a crystalline structure is formed subsequently after the epitaxial growth in the same reactor without any exposure in the air. The formation of the in-situ SiN greatly enhanced the sheet carrier concentration, which helps the reduction of the parasitic resistances. The fabricated MIS-HFET exhibits very high maximum oscillation frequency (f max ) of 203 GHz for the device with the gate length of 100 nm. The device exhibits the off-state breakdown voltages of 190 V at highest maintaining the high f max over 190 GHz, and is thus promising for high frequency and high power applications including future millimeter wave communication systems.Index Terms -AlGaN/GaN heterojunction FET, in situ SiN, metal-insulator-semiconductor type gate structure, sapphire

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“…These are designed to further increase performance over regular GaN HFETs in terms of drain current, linearity and gate leakage current as first presented in [4]. Single chip amplifers using this kind of devices delivering over 100 W at 2.14 GHz [5] and MISHFETs for frequencies up to f t = 180 GHz have been reported [6]. The technology sets new demands on modeling and circuit design.…”

Section: Introductionmentioning

confidence: 99%

Advanced Modeling of MISHFET Devices and their Performance in Current-Mode Class-D Power Amplifiers

Cumana

Lautensack

Eickelkamp

et al. 2008

2008 European Microwave Integrated Circuit Conference

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GaN HFETs and MISHFETs are promising power devices for RF and microwave power applications. However, the performance of devices can be compromised under some operating conditions. From the device development point of view, device optimization is necessary to obtain the best possible performance. For device modeling and design purposes, the device needs to be characterized and modeled accurately in order to foresee how the device will behave under realistic operating conditions.In this paper, an improved EEHEMT1-based model for GaN MISHFETs, will be introduced. This model is capable of describing the knee region of the device's output characteristics, dispersion effects as well as gate diode behavior accurately. The models will be incorporated in a switched-mode amplifier topology and evaluations will be made to determine the suitability of MISHFETs in these amplifiers.

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An over 100 W n-GaN/n-AlGaN/GaN MIS-HEMT power amplifier for wireless base station applications

Cited by 41 publications

References 10 publications

High power and high gain AlGaN/GaN MIS‐HEMTs with high‐k dielectric layer

High power and high gain AlGaN/GaN MIS‐HEMTs with high‐k dielectric layer

High fmax with High Breakdown Voltage in AlGaN/GaN MIS-HFETs using In-Situ SiN as Gate Insulators

Advanced Modeling of MISHFET Devices and their Performance in Current-Mode Class-D Power Amplifiers

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