An overview of the switching parameter variation of RRAM

Zhang, Meiyun; Long, Shibing; Wang, Guo‐Ming; Li, Yang; Xu, Xiaoxin; Liu, Hongtao; Liu, Ruo-Yu; Wang, Ming; Cong-fei, LI; Sun, Pengxiao; Sun, Haitao; Liu, Qi; Lü, HangBing; Liu, Ming

doi:10.1007/s11434-014-0673-z

Cited by 16 publications

(6 citation statements)

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“…A C C E P T E D ACCEPTED MANUSCRIPT materials, such as switching mode, operation speed, endurance, etc, has been well summarized in previous reviews [1][2][3][4][5][6][7][8][9][10][11][12][13][14].…”

Section: A N U S C R I P Tmentioning

confidence: 99%

“…The academic and industrial research topics on RRAM cover quite a wide range: materials problem, RS mechanism, manufacture, integration, and even other function beyond the data storage, as reviewed previously [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. In this review article, we concentrate on the materials science issue including the material selection and the corresponding RS mechanisms.…”

Section: Introductionmentioning

confidence: 99%

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An overview of materials issues in resistive random access memory

Zhu

Zhou

Guo

et al. 2015

Journal of Materiomics

122

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Resistive random access memory (RRAM) is a very promising next generation non-volatile RAM, with quite significant advantages over the widely used silicon-based Flash memories. For RRAM, material with switchable resistance, working as the storage medium, is the most important part for the performance of the memory. In this review, as a start, some general hints for the materials selection are proposed. Then most recent studies on this emerging memory from the perspective of materials science are summarized: various materials with resistance switch (RS) behavior and the underlying mechanisms are introduced; as a complementary to the previous review articles, here the increasingly important role of computational materials science in the research of RRAM is presented and highlighted. By incorporating the framework of high-throughput calculation and multi-scale simulations, design process of new RRAM could be accelerated and more cost-effective.

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Section: A N U S C R I P Tmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

An overview of materials issues in resistive random access memory

Zhu

Zhou

Guo

et al. 2015

Journal of Materiomics

122

View full text Add to dashboard Cite

show abstract

“…In recent studies, conductance quantization phenomena have been proved to exist in the atomic-sized CF in RRAM [ 69 – 72 ], and the interest for studying them continues. Revealing the QC effect is of great significance to deeply understand the physics of RS mechanism in mesoscopic dimension, which is important to control the performance, reliability, and variability [ 73 , 74 ] of RRAMs and to advance their practical application as non-volatile memories. At the same time, if the conductance quantization behaviors can be well modulated, it in turn can be utilized to realize the multi-level storage for ultra-high-density memory applications.…”

Section: Reviewmentioning

confidence: 99%

Conductance Quantization in Resistive Random Access Memory

et al. 2015

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The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects.

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“…NiO [50,190,191] , CoO [145] , TiOx [192] , MnOx [60] Russo等人 [193] 在2007年IEDM会议中报道了一种基于导电细丝自加速热熔断的RESET模型, 很好地解释了基于NiO薄膜材料的单极性电阻转变特性. 在这个模型中, Russo等人 [194] [190,191,[195][196][197][198][199] [190,191,197] , SET基于阻变层击穿机制 [196] . 进一步通过统计分析和蒙特卡洛模拟等方法研究了导电细丝演化的过程和物理机理 [198] , 发现细丝变化具有不同的阶段和形态(图6), 尤其是在断裂之前显示出量子化特征 [30,195] , 这些现象和规律都可以用热熔解模型统一解释.…”

Section: 热化学机制主要用来解释单极电阻转变现象这种现象经常出现在一些过渡族金属氧化物中如unclassified