An RF-to-DC Rectifier With High Efficiency Over Wide Input Power Range for RF Energy Harvesting Applications

Saffari, Parvaneh; Basaligheh, Ali; Moez, Kambiz

doi:10.1109/tcsi.2019.2931485

Cited by 58 publications

(28 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a matter of fact, if this one is too high, a large part of the signal is consumed by the transistor, while if it is too low, the reverse current (OFF state) overwhelms the charging process, which results in PCE being lower than expected. Among the different existing topologies [18,19,25], the Cross-Coupled Differential Drive (CCDD) [8,11] might be the best strategy for RF signal rectification. In the CCDD, the peak-to-peak RF signal is applied as a differential input at the gate/source transistor, providing a DC common mode as static bias to overcome the V TH and a differential mode for an active control of the rectification.…”

Section: Topologymentioning

confidence: 99%

From 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits

et al. 2022

View full text Add to dashboard Cite

In this present work, different Cross-Coupled Differential Drive (CCDD) CMOS bridge rectifiers are designed using either 32 nm or Tunnel-FET (TFET) technology. Commercial PDK has been used for the 32 nm technology, while lookup tables (LUT) resulting from a physics model have been applied for the TFET. To consider the parasitic effects for the circuit performances, the 32 nm-based circuits have been laid out, while a parasitic model has been included in the TFET LUT for circuit implementation. In this work, the post-layout simulations, including parasitic, demonstrate for conventional CCDD circuits that TFET technology has a larger dynamic range (DR) (>60%) and better 1 V-sensitivity than the 32 nm planar technology has. Note that, in this case, the figure of merit defined by the Voltage Conversion Efficiency (VCE) and Power Conversion Efficiency (PCE) remains somewhat similar. On the other hand, topology proposing better VCE at the cost of low PCE shows lower performance than expected in 32 nm than in reported data for larger technology nodes (e.g., 180 nm). The TFET-based circuit shows a PCE of 70%, VCE of 82% with an 8 dB DR (>60%), and the best 1 V-sensitivity in this work. Because of the low-bias condition and the good reverse current blocking (unidirectional channel), the TFET offers new perspectives for RF-DC rectifier/multiplier topology, which are usually limited with planar technology.

show abstract

Section: Topologymentioning

confidence: 99%

From 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits

et al. 2022

View full text Add to dashboard Cite

show abstract

“…It also determines the performance of the output impedance and stores the available output dc supply [11], [28]- [29]. R L is generally complex and frequencydependent [30]- [31]. R ant represents the characteristics impedance of the RF input source, with a typical input impedance of 50 Ω [32]- [33].…”

Section: Rectifier Designmentioning

confidence: 99%

A Dual-Band Ambient Energy Harvesting Rectenna Design for Wireless Power Communications

et al. 2021

View full text Add to dashboard Cite

In this paper, a long-range dual-band rectenna for harvesting ambient radio frequency (RF) energy from GSM/900 and GSM/1800 is presented. Theoretical analysis of the proposed dual-band impedance matching network (IMN) is conducted using a modified Π-section matching network (MN). The RF-rectifier is integrated with a dual-band inverted-F monopole antenna. The rectenna circuit complexity is minimized by introducing a dual-band IMN, which plays a significant role in improving the harvester RF-to-dc power conversion efficiency (PCE). Measurement results of the proposed design achieved a peak RF-to-dc PCE of 12.93% and 8.0% for an input power of -30 dBm at 0.9 GHz, and 1.8 GHz, respectively. The RF harvester ambiance measurement attained an output dc voltage of 0.374 V. The circuit generates 0.747 V using a low-powered bq25504-674 evaluation module (EVM). Thus, adequate energy management of the proposed rectenna can be used to power many low-powered devices from the harvested ambient RF energy.INDEX TERMS RF energy harvesting (RFEH); impedance matching network (IMN); power conversion efficiency (PCE); rectenna.

show abstract

“…In previous research, various antenna shapes and different circuit topologies were adopted to increase the receiver performance. A power amplifier, a voltage doubler, a power combiner, and impedance matching techniques were developed to compromise the different input power levels, thereby increasing the RF-DC conversion efficiency [11][12][13][14][15][16]. Multiple-band, three-dimensional, wide-angle structures were studied to increase usability and antenna gain in various circumstances [17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Extendable Array Rectenna for a Microwave Wireless Power Transfer System

et al. 2021

View full text Add to dashboard Cite

A rectenna is adopted in a microwave-based wireless power transfer system to rectify the received RF to DC power. Each rectenna includes a DC-DC converter at the DC output port to ensure a stable power supply and a Schottky diode for the DC-combining network. The results demonstrate that the RF-DC conversion efficiencies of the rectifier circuit and 4 × 1 rectenna were 71% and 71.2% when the unit-cell RF input level was 19 dBm and 19.6 dBm. The DC output levels of a 4 × 8 rectenna with and without the DC-DC converter were 28 V and 30 V when the unit-cell RF input level was 20.2 dBm. The RF-DC conversion efficiency was measured as 52.6% and 59.9% with and without the DC-DC converter, respectively. The Schottky diode combined with the D-DC C converter at the DC output port exhibits an increase in the DC power combining level, making it suitable for an extendable array rectenna system.

show abstract

An RF-to-DC Rectifier With High Efficiency Over Wide Input Power Range for RF Energy Harvesting Applications

Cited by 58 publications

References 28 publications

From 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits

From 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits

A Dual-Band Ambient Energy Harvesting Rectenna Design for Wireless Power Communications

Extendable Array Rectenna for a Microwave Wireless Power Transfer System

Contact Info

Product

Resources

About