An S-band 350W internally matched solid-state power amplifier using GaN power HEMTs

Gu, Liming; Tang, Shijun; Xu, Yonggang; Che, Wenquan; Feng, Wenjie

doi:10.1109/iwem.2016.7505011

Cited by 8 publications

(5 citation statements)

References 6 publications

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“…With the increasing requirements for high power/efficiency in PA designs, GaN technology has been widely adopted due to its excellent characteristics 1 . Many amplifiers with over 100 W output power have been reported for X ‐band 2–6 . To further improve the output power level of a single internally matched device, the increasement of the operation voltage and total gate periphery have been adopted simultaneously.…”

Section: Introductionmentioning

confidence: 99%

“…1 Many amplifiers with over 100 W output power have been reported for X-band. [2][3][4][5][6] To further improve the output power level of a single internally matched device, the increasement of the operation voltage and total gate periphery have been adopted simultaneously. Besides the improvement of GaN transistor die and matching network, heat dissipation of the package and transistor die also needs to be considered, which is very necessary for reliable operation of the devices.…”

Section: Introductionmentioning

confidence: 99%

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A high power X‐band internally‐matched power amplifier with 705 W peak power and 51.7% PAE

Feng

Zhou

et al. 2021

Int J RF Mic Comp-Aid Eng

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A high power and high efficiency fully internally-matched GaN power amplifier operating at X-band is proposed. The device is realized by matching four GaN power bars of 18-mm gate periphery. To reduce the size, single layer capacitors with high permittivity are used, and the impedance matching circuits are fabricated on Al 2 O 3 ceramic substrate. The device exhibits saturated output power of more than 660 W with power gain above 9.8 dB within the frequency range of 8.2-8.8 GHz, based on the pulse mode of 100 μs pulse width and 10% duty. In addition, the highest saturated output power and power added efficiency reach 705 W and 51.7% with packaging compact size (26 mm Â 17.4 mm).

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A high power X‐band internally‐matched power amplifier with 705 W peak power and 51.7% PAE

Feng

Zhou

et al. 2021

Int J RF Mic Comp-Aid Eng

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“…Due to these benefits, various q-MMIC PAs have been pro-posed to meet different demands. To obtain a high power of 350 W, a compact 3.1 to 3.5 GHz q-MMIC GaN PA was proposed in Gu et al (2016). To obtain a power of about 50 W and efficiency of more than 55%, three low-cost q-MMIC GaN PAs were proposed in S and C-band in Berrached et al (2015) and Camiade et al (2012).…”

Section: Introductionmentioning

confidence: 99%

A compact broadband high power quasi-MMIC GaN power amplifier

Liu

Lin

Wu³

et al. 2021

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Purpose The design and implementation of a broadband quasi-monolithic microwave integrated circuit (q-MMIC) power amplifier (PA) is presented for 0.2 to 2.2 GHz applications. Design/methodology/approach To obtain an efficient, high-gain and high-power performance with in a compact and low-cost size, the prototype is based on Gallium nitride (GaN) on SiC 0.25-µm transistors, whereas the passive matching networks are realized on an AlN substrate as thin film circuit. Findings Measured results of the q-MMIC PA across the 0.2 to 2.2 GHz band show at least 32 ± 3 dB small-signal gains, an output power of 7 to 12 W and an average power add efficiency greater than 54%. The q-MMIC occupies an area of 12.8 × 14.5 mm2. Originality/value To the best of the authors’ knowledge, this work reports the first full integrated PA which covers the frequency range of 0.2 to 2.2 GHz and achieves the combination of highest gain, about 10 W output power, together with the smallest component size among all published GaN PAs to date.

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“…Currently, power amplifiers (PAs) are widely used in industrial applications, such as electromagnetic compatibility (EMC) measurement, base station communication systems, wireless systems, and satellite communications. The amplifier's bandwidth, efficiency, and output power play key roles in determining the system performance in industrial applications [1–6]. Also, high PAs (HPAs) are an important and expensive instrument for the EMC radiated immunity measurement tests.…”

Section: Introductionmentioning

confidence: 99%

“…The main challenge in choosing and designing PCNs is how to obtain the required number of the PAs to achieve the desired output power. This challenge is affected by the relevant design parameters such as power capability, bandwidth, and operational frequency [1–5, 13].…”

Section: Introductionmentioning

confidence: 99%

Design and fabrication methodology for industrial broadband high power amplifiers

Alekajbaf

Masoumi

Safavi‐Naeini

2020

IET Microwaves, Antennas & Propagation

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An S-band 350W internally matched solid-state power amplifier using GaN power HEMTs

Cited by 8 publications

References 6 publications

A high power X‐band internally‐matched power amplifier with 705 W peak power and 51.7% PAE

A high power X‐band internally‐matched power amplifier with 705 W peak power and 51.7% PAE

A compact broadband high power quasi-MMIC GaN power amplifier

Design and fabrication methodology for industrial broadband high power amplifiers

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